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Fundamentals of Power Semiconductor Devices
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In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
Buck Converter With Merged Active Charge-Controlled Capacitive Attenuation
TL;DR: In this article, a converter and a complementary digital controller have been proposed to reduce the volume and switching losses of the converter by replacing the input filter capacitor with a capacitive attenuator.
Proceedings ArticleDOI
An on-line fault diagnosis method for power electronic drives
TL;DR: In this paper, the authors describe online techniques for monitoring the health of two most sensitive components in power electronic systems, namely electrolytic filtering capacitors and controllable semiconductor switches (i.e. MOSFETs and IGBTs).
Journal ArticleDOI
Improved Vertical GaN Schottky Diodes with Ion Implanted Junction Termination Extension
Travis J. Anderson,Jordan D. Greenlee,Boris N. Feigelson,Jennifer K. Hite,Fritz J. Kub,Karl D. Hobart +5 more
TL;DR: In this paper, GaN Schottky barrier diodes with edge termination formed by either a field plate or junction termination extension (JTE) achieved by ion implanted and symmetric multicycle rapid thermal annealing (SMRTA) are presented.
Journal ArticleDOI
Modeling of the Steady State and Switching Characteristics of a Normally Off 4H-SiC Trench Bipolar-Mode FET
TL;DR: In this article, the electrical characteristics of a normally off 4H-silicon carbide (SiC) bipolar-mode FET are investigated by means of a careful design activity and an intensive simulation study useful for a first-time-ever realization of this device in SiC specific physical models and parameters strictly related to the presently available 4HSiC technology are taken into account.
Journal ArticleDOI
Simulations of Junction Termination Extensions in Vertical GaN Power Diodes
Jonathan J. Wierer,Jeramy R. Dickerson,Andrew A. Allerman,Andrew M. Armstrong,Mary H. Crawford,Robert Kaplar +5 more
TL;DR: In this article, the authors presented simulations of the reverse breakdown behavior of GaN power diodes with junction termination extensions (JTEs) under reverse bias and showed that all the Mg dopants contribute charge and determine the performance of the JTE.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.