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Fundamentals of Power Semiconductor Devices
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In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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Journal ArticleDOI
An Improved 4H-SiC Trench MOS Barrier Schottky Diode With Lower On-Resistance
TL;DR: An improved 4H-SiC trench MOS barrier Schottky (TMBS) structure that can significantly reduce the specific on-resistance is proposed in this paper and can be effectively improved by 41.9% and 70.9%, respectively.
Alterung von Leistungshalbleitermodulen im Temperatur-Feuchte-Spannungs-Test
TL;DR: In this article, a more detailed analysis of the H3TRB test is presented, showing that the degradation occurs much earlier and, thus, this kind of test strategy is not sufficient and, instead, leakage monitoring and intermediate blocking measurements yield a much better estimation of the degradation status.
Book ChapterDOI
Entwicklung von elektrofahrzeugspezifischen Systemen
Thilo Röth,Achim Kampker,Uwe Reisgen,Kay Hameyer,Rik W. De Doncker,Thilo Stolze,Andreas Vetter,Jürgen Hagedorn,Dirk Uwe Sauer,Dirk Müller +9 more
TL;DR: In this paper, a new innovative Karosseriebauweisen, bspw. aufgrund eines neuen Fahrzeugkonzeptes oder neuer Anforderungen, bedeuten fur den OEM auch gleichzeitig die intensive Auseinandersetzung mit Kompetenzfokussierung bzw. Wertschopfungsverlagerungen.
Journal ArticleDOI
Optimization of Ion Implantation processes for 4H-SiC DIMOSFET
Nicolò Piluso,Enzo Fontana,M. A. Di Stefano,Grazia Litrico,Stefania Privitera,Alfio Russo,Simona Lorenti,Salvo Coffa,F. La Via +8 more
TL;DR: In this article, the defects generated by ion implantation in 4H-SiC DIMOSFETs and their evolution after annealing process, have been studied in detail.
Journal ArticleDOI
Positive-bevel edge termination for SiC reversely switched dynistor
TL;DR: In this paper, the termination structure for the pulsed power switch SiC RSD (reversely switched dynistor) was studied and the positive-bevel edge termination was designed.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.