BookDOI
Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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Proceedings ArticleDOI
Design and fabrication of switching characterization set-up for GaN FETs
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Dissertation
Etude de l'impact des paramètres de protection périphérique et environnementaux de composants de puissance en carbure de silicium en vue de leur montée en tension
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Zero voltage switching characterization of 12 kV SiC N-IGBTs
Arun Kadavelugu,Subhashish Bhattcharya,B. Jayant Baliga,Sei-Hyung Ryu,David Grider,John W. Palmour +5 more
TL;DR: In this paper, the state-of-the-art 12 kV SiC N-IGBTs with 2 μm and 5 μm field-stop buffer layer thicknesses with and without an external snubber capacitor were investigated.
Journal ArticleDOI
A Defects-Based Model on the Barrier Height Behavior in 3C-SiC-on-Si Schottky Barrier Diodes
Anastasios Arvanitopoulos,Marina Antoniou,Michael R. Jennings,Samuel Perkins,Konstantinos N. Gyftakis,Philip Mawby,Neophytos Lophitis +6 more
TL;DR: In this paper, an advanced technology computer-aided design (TCAD) model is proposed and validated with measurements obtained from a fabricated and characterized platinum/3C-SiC-on-Si SBD with scope to shed light on the physical carrier transport mechanisms, the impact of traps, and their characteristics on the actual device performance.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.