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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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Journal ArticleDOI
1.4kV Planar Gate Superjunction IGBT with Stepped Doping Profile in Drift and Collector Region
Namrata Gupta,Alok Naugarhiya +1 more
TL;DR: In this article, a stepped doping profile in alternate pillars and collector region of superjunction IGBT structure is presented, which consists of lightly and heavily doped region in upper and lower part of drift region.
Journal ArticleDOI
Single-Event Effects in Power MOSFETs During Heavy Ion Irradiations Performed After Gamma-Ray Degradation
TL;DR: In this paper, the robustness of commercial power metal-oxide semiconductor field effect transistors to combined gamma-heavy ion irradiation has been investigated, evidence that the degradation of the gate oxide caused by the γ irradiation can severely corrupt the robusts to single-event effects and drastically modify the physical behavior of the device under test after the impact of a heavy ion.
Proceedings ArticleDOI
IGBT junction temperature estimation via gate voltage plateau sensing
TL;DR: In this paper, a method for in-situ high bandwidth junction temperature estimation of insulated gate bipolar transistors (IGBTs) is introduced, which is based on the acquisition of the gate voltage plateau during turn-on.
Proceedings ArticleDOI
Experimental study on IGBT voltage and current stresses during switching transitions
TL;DR: In this paper, the authors present experimental investigations on switching characteristics of high-power Insulated Gate Bipolar Transistor (IGBT) modules at different dc link voltages, load currents and operating temperatures.
Journal ArticleDOI
Significant On-Resistance Reduction of LDMOS Devices by Intermitted Trench Gates Integration
TL;DR: In this article, a concept for the integration of intermitted trench gates into silicon lateral double-diffused metal-oxide-semiconductor (LDMOS) devices is proposed to achieve a significant reduction in on-resistance.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.