BookDOI
Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Dissertation
A novel AlGaN/GaN based enhancement-mode high electron mobility transistor with sub-critical barrier thickness
TL;DR: In this article, a new high performance normally-off GaN-based metal-oxide-semiconductor (MOS) high electron mobility transistor (HEMT) that employs an ultrathin sub-critical 3nm Al.25Ga_0.75N barrier layer and relies on an induced two dimensional electron gas (2DEG) for operation was designed, fabricated and characterized.
Proceedings ArticleDOI
SiC power devices: From conception to social impact
TL;DR: This invited paper reviews the evolution of silicon carbide power devices from the initial proposal for wide bandgap semiconductors for power electronic applications in 1979 to current commercially available devices.
Journal ArticleDOI
HVPE GaN for high power electronic Schottky diodes
Randy P. Tompkins,Timothy A. Walsh,Michael A. Derenge,K.W. Kirchner,Shuai Zhou,Cuong B. Nguyen,Kenneth A. Jones,G. Mulholland,Robert Metzger,Jacob H. Leach,Puneet Suvarna,Mihir Tungare,Fatemeh Shahedipour-Sandvik +12 more
TL;DR: In this article, the authors evaluated HVPE grown GaN for high power Schottky diodes (SDs) for applications <1000 V in that breakdown voltages (VB) near this value can be readily obtained with figures of merit (FOM) of ≈250 MW/cm2.
Journal ArticleDOI
Impact Ionization Coefficients in 4H-SiC by Ultralow Excess Noise Measurement
James E. Green,Wei Sun Loh,Andrew R. J. Marshall,B.K. Ng,Richard C. Tozer,John P. R. David,Stanislav I. Soloviev,Peter Micah Sandvik +7 more
TL;DR: In this paper, the ionization coefficients for both carrier types have been extracted from these data using a local model and the use of the excess noise factor to infer the value of the less readily ionizing coefficient α from pure hole injection measurements is more robust than direct extraction from mixed injection measurements.
Journal ArticleDOI
A Power Supply Achieving Titanium Level Efficiency for a Wide Range of Input Voltages
TL;DR: In this paper, a new topology is investigated closely, showing that the titanium grade may be achievable at low-line input with traditional silicon devices by the utilization of low voltage mosfet s, which have an excellent figure of merits, by connecting two converter stages in parallel for low line input or in series for high line input.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.