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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
In situ Condition Monitoring of IGBTs Based on the Miller Plateau Duration
TL;DR: In this paper, the Miller plateau duration during the IGBT turn-on transition is proposed as an online precursor indicating two dominant types of failures, namely package-related bond wire fatigue and chip-related gate oxide degradation.
Journal ArticleDOI
Split-Gate 1.2-kV 4H-SiC MOSFET: Analysis and Experimental Validation
TL;DR: The 1.2-kV-rated 4H-SiC Split Gate MOSFET (SG-MOS-FET) was demonstrated to have superior high-frequency figures-of-merit (HF-FOMs) by numerical simulations, with experimental validation for the first time as mentioned in this paper.
Journal ArticleDOI
Active Power Device Selection in High- and Very-High-Frequency Power Converters
TL;DR: In this paper, the authors provide a road map for selecting power devices in soft-switched, megahertz (MHz) frequency power converters, and demonstrate a 100 W, 17 MHz dc-RF inverter using a custom-packaged silicon carbide (SiC) power mosfet s.
Journal ArticleDOI
An Experimental Evaluation of SiC Switches in Soft-Switching Converters
TL;DR: In this paper, the authors compared several types of SiC transistors to a state-of-the-art 1200-V Si IGBT and found that the SiC-transistors showed no signs of dynamic conduction losses in the studied frequency range.
Proceedings ArticleDOI
Analytical loss model for power converters with SiC MOSFET and SiC schottky diode pair
TL;DR: In this paper, a simple and accurate analytical loss model for Silicon Carbide (SiC) power devices is proposed, which considers the package and PCB parasitic elements in the circuits, nonlinearity of device junction capacitance and ringing loss.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.