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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
Area-Efficient, 600V 4H-SiC JBS Diode-Integrated MOSFETs (JBSFETs) for Power Converter Applications
TL;DR: In this article, a low-voltage (<600V) monolithically integrated 4H-silicon carbide (SiC) MOSFET and JBS diode (JBSFET) was demonstrated.
Proceedings ArticleDOI
High-power density hybrid converter topologies for low-power Dc-Dc SMPS
TL;DR: This paper gives a review of several emerging dc-dc converter topologies that combine capacitor-based and inductive converters in single hybrid converter structures and shows that the hybrid buck converters allow for a drastic reduction of the inductive components while minimizing switching losses and improving the overall power processing efficiency.
Journal ArticleDOI
Investigation of the Universal Mobility of SiC MOSFETs Using Wet Oxide Insulators on Carbon Face With Low Interface State Density
TL;DR: It has been confirmed that the universal mobility of SiC MOSFETs shows a universal characteristic as a function ofTeX, and this result leads to a better understanding of electron transport properties in SiC inversion layers and the improvement of the accuracy of device and circuit simulations.
Journal ArticleDOI
Modeling of SiC IGBT Turn-Off Behavior Valid for Over 5-kV Circuit Simulation
TL;DR: In this paper, a compact model of SiC insulated-gate bipolar transistors (IGBTs) for power electronic circuit simulation is presented. But the authors focus on the modeling of important specific features in the turn-off characteristics of the 4H-SiC IGBT, which are investigated with a 2D device simulator, at supply voltages higher than 5 kV.
Journal ArticleDOI
A model of the off-behaviour of 4H–SiC power JFETs
TL;DR: A physical model of the off-behaviour of VJFETs up to their blocking voltage limit is presented in this article, where the drain current, I D, of these devices strongly depends on the amount of the voltage barrier occurring in the channel.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.