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Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
Citations
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Journal ArticleDOI
Selection Methodology for Si Power MOSFETs Used to Enhance SiC Power MOSFET Short-Circuit Capability With the BaSIC(EMM) Topology
Ajit Kanale,B. Jayant Baliga +1 more
TL;DR: In this article, a tradeoff between the Si EMM drain saturation current at 150°C versus its on-resistance at 25°C is proposed for determination of the best Si Emm product.
Journal ArticleDOI
Enhancing Short Circuit Capability of 1.2-kV Si IGBT Using a Gate-Source Shorted Si Depletion Mode MOSFET in Series With the Emitter
Ajit Kanale,B. Jayant Baliga +1 more
TL;DR: In this article, a gate-source-shorted Si depletionmode (DM) mosfet connected in series with the emitter is used to improve the short-circuit capability of IGBTs optimized with low on-state voltage drop.
Journal ArticleDOI
An Improved Analytical Model for Carrier Multiplication Near Breakdown in Diodes
Raymond J. E. Hueting,Anco Heringa,B. K. Boksteen,Satadal Dutta,Alessandro Ferrara,Vishal Agarwal,Anne-Johan Annema +6 more
TL;DR: In this article, a closed-form analytical model is derived for the ionization current before the onset of breakdown induced by both injection current components, which is compared and verified with TCAD simulations, and to some extent with experimental data, for silicon p-i-n diodes.
Journal ArticleDOI
The Distributed Heat Source Modeling Method for the Finite Element Simulation of IGBTs
TL;DR: A distributed heat source model consisting of a body heat source and two boundary heat sources is proposed in this article, based on the ON-state model of the IGBT module, and the model can improve the accuracy of thermal simulation results, especially the transient results in a short time.
Proceedings ArticleDOI
Parameter Extraction Procedure for Surface-Potential-Based SiC MOSFET Model
TL;DR: In this article, an extraction of model parameters for the current characteristics of an SiC power MOSFET model is studied. But the authors focus on the initial values of the model parameters, which are critically important to obtain a good fitting result.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.