BookDOI
Fundamentals of Power Semiconductor Devices
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TLDR
In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.Abstract:
Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.read more
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Proceedings ArticleDOI
The boost transistor: A field plate controlled LDMOST
Alessandro Ferrara,Anco Heringa,B. K. Boksteen,J. Claes,A. P. van der Wel,Jurriaan Schmitz,Raymond J. E. Hueting,Peter G. Steeneken +7 more
TL;DR: In this article, a boost transistor is proposed, which is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance R on A.
Journal ArticleDOI
A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms
TL;DR: Based on the physical structure and conduction mechanism of the IGBT module, the authors models the on-state voltage and gives a detailed method for extracting the onstate voltage, which is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules.
Journal ArticleDOI
New Marx Generator Architecture With a Controllable Output Based on IGBTs
TL;DR: A new architecture of a high-voltage Marx pulse generator based on isolated gate bipolar transistors (IGBTs) that allows continuous control of the output voltage by acting on the IGBTs activation time: “on-time” is proposed.
Journal ArticleDOI
A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode
TL;DR: In this paper, a SiC asymmetric cell trench MOSFET with split gate (SG) and integrated junction barrier schottky (JBS) diode (SGS-ATMOS) is proposed.
Journal ArticleDOI
A Comprehensive Analytical Study of Dielectric Modulated Drift Regions—Part I: Static Characteristics
TL;DR: In this paper, an analytical model for DM drift regions with cylindrical cells is proposed and compared with linear cells, and an optimal tradeoff between breakdown voltage and specific ON-resistance is obtained by a methodology developed in this paper.
References
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Book
Modern power devices
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Journal ArticleDOI
Silicon-carbide high-voltage (400 V) Schottky barrier diodes
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Journal ArticleDOI
Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Journal ArticleDOI
Evolution of MOS-bipolar power semiconductor technology
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.