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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Citations
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Journal ArticleDOI

Characterization of Sm-doped CeO2 nanoparticles and their magnetic properties

TL;DR: In this article, X-ray diffraction, Raman and XPS spectra were used to characterize the phase, morphology, valence states and magnetic properties of the samples.
Journal ArticleDOI

Feasibility study of logic circuits with a spin?wave bus

TL;DR: In this article, the authors present a feasibility study of logic circuits utilizing spin waves for information transmission and processing, and illustrate its performance by numerical simulations based on available experimental data, including signal attenuation, signal phase velocity, and the minimum spin wave energy required per bit in the spin bus.
Journal ArticleDOI

Non-transition-metal doped diluted magnetic semiconductors

TL;DR: In this paper, the magnetic properties of non-transition metal doped semiconductors Al(N,X) and Zn(O,X), where X is a first row atom, were investigated based on first-principles calculations.
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Observation of the spin-charge thermal isolation of ferromagnetic Ga 0.94 Mn 0.06 As by time-resolved magneto-optical measurements

TL;DR: In this article, the dynamics of magnetization under femtosecond optical excitation was studied in a ferromagnetic semiconductor with a time-resolved magneto-optical Kerr effect measurement with two-color probe beams.
Journal ArticleDOI

Feasibility Study of Logic Circuits with Spin Wave Bus

TL;DR: This work describes the general concept of logic circuits with a spin wave bus and illustrates its performance by numerical simulations based on available experimental data, and theoretical estimates and results of numerical simulations on signal attenuation, signal phase velocity, and the minimum spin wave energy required per bit in the spin bus are obtained.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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