Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.Abstract:
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.read more
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Recent advances in processing of ZnO
TL;DR: In this paper, a review of recent results in developing improved fabrication processes for ZnO devices with the possible application to UV light emitters, spin functional devices, gas sensors, transparent electronics, and surface acoustic wave devices is given.
Journal ArticleDOI
Magnetic properties of Mn-doped ZnO
Tomoteru Fukumura,Zhengwu Jin,Masashi Kawasaki,T. Shono,T. Hasegawa,Shin-ya Koshihara,Hideomi Koinuma +6 more
TL;DR: In this paper, the magnetic properties of an oxide-diluted magnetic semiconductor (DMS), Zn0.64Mn 0.36O, were investigated and the temperature dependence of the magnetization showed a spin-glass behavior with the large magnitude of the Curie-Weiss temperature.
Journal ArticleDOI
Study of diluted magnetic semiconductor: Co-doped ZnO
TL;DR: In this article, the lattice constant of c axis of wurtzite Zn1−xCoxO follows Vergard's law for 0
Journal ArticleDOI
Current-induced domain-wall switching in a ferromagnetic semiconductor structure
TL;DR: It is demonstrated that, in a ferromagnetic semiconductor structure, magnetization reversal through domain-wall switching can be induced in the absence of a magnetic field using current pulses with densities below 105 A cm-2.
Journal ArticleDOI
Room temperature ferromagnetic properties of (Ga, Mn)N
M. L. Reed,Nadia A. El-Masry,Hans H. Stadelmaier,M. K. Ritums,M. J. Reed,C. A. Parker,John C. Roberts,Salah M. Bedair +7 more
TL;DR: In this paper, the Curie temperature of Mn-doped GaN films has been obtained by varying the growth and annealing conditions of the GaN and they have been shown to have ferromagnetic behavior with hysteresis curves showing a coercivity of 100−500 Oe.
References
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Journal ArticleDOI
Making Nonmagnetic Semiconductors Ferromagnetic
TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors
TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Hideo Ohno,Aidong Shen,Fumihiro Matsukura,Akira Oiwa,Akira Endo,Shingo Katsumoto,Yasuhiro Iye +6 more
TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI
Interaction Between the d Shells in the Transition Metals
TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.