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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Journal ArticleDOI

Ferromagnetic properties of Zn1−xMnxO epitaxial thin films

TL;DR: In this paper, the properties of Zn1−xMnxO (x=0.1 and 0.3) thin films grown on Al2O3(00⋅1) substrates using laser molecular-beam epitaxy were investigated.
Journal ArticleDOI

Semiconductor spintronics

TL;DR: In this article, the authors review recent progress made in the field of semiconductor spintronics, a branch of the semiconductor electronics where both charge and spin degrees of freedom play an important role in realizing unique functionalities.
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Transition metal-doped TiO2 and ZnO?present status of the field

TL;DR: In this paper, the authors summarize the current status of oxide-based diluted magnetic semiconductors, and discuss the influence of growth method, substrate choice, and temperature on the microstructure and subsequent magnetic properties of thin films.
Journal ArticleDOI

The Quantum Anomalous Hall Effect: Theory and Experiment

TL;DR: The quantum anomalous Hall effect as mentioned in this paper is defined as a quantized Hall effect realized in a system without an external magnetic field and is a novel manifestation of topological structure in many-electron systems and may have potential applications in future electronic devices.
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On the origin of high-temperature ferromagnetism in the low-temperature-processed Mn-Zn-O system.

TL;DR: The results strongly suggest that the observed ferromagnetic phase is oxygen-vacancy-stabilized Mn2−xZnxO3−δ, rather than by carrier-induced interaction between separated Mn atoms in ZnO.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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