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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Journal ArticleDOI

Laser molecular beam epitaxy of ZnO thin films and heterostructures

TL;DR: In this article, the growth of epitaxial ZnO thin films and heterostructures on sapphire substrates by laser molecular beam epitaxy (MBE) was reported.
Journal ArticleDOI

Epitaxial growth and properties of Zn1−xVxO diluted magnetic semiconductor thin films

TL;DR: In this article, the epitaxial growth and properties of Zn1−xVxO[x=0.001-0.2] thin films were deposited onto sapphire c-plane single crystals.
Journal ArticleDOI

Magnetoresistance in laser-deposited Zn1–xCoxO thin films

TL;DR: In this article, the authors measured the temperature and magnetic field dependence of the magnetoresistance (MR) in a series of laser-deposited Zn1-xCoxO (x=0.02-0.25) thin films doped with 1-mol% Al.
Journal ArticleDOI

Spin-Controlled Vertical-Cavity Surface-Emitting Lasers

TL;DR: In this paper, the authors discuss the concept of spin-controlled vertical-cavity surface-emitting lasers (VCSELs) and analyze it with respect to potential room-temperature applications in spin-optoelectronic devices.
Journal ArticleDOI

Optical properties and functions of dilute magnetic semiconductors

TL;DR: The magneto-optical effect in dilute magnetic semiconductors (DMSs) is directly related to the interaction between the d electrons of the transition metal ions and the s, p electrons of host semiconductor as mentioned in this paper.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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