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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Citations
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Journal ArticleDOI

Paramagnetism and antiferromagnetic d–d coupling in GaMnN magnetic semiconductor

TL;DR: In this article, the magnetization of Ga1−xMnxN (x < 0.1) crystals was measured as a function of the magnetic field and temperature.
Journal ArticleDOI

Ferromagnetism in oxide semiconductors

TL;DR: In this article, the relationship between donor electrons and ferromagnetism was explored in n-type magnetically doped oxide semiconductors and two well-characterizedn-type magnetic doped oxides were considered.
Journal ArticleDOI

Spintronic oxides grown by laser-MBE

Matthias Opel
- 25 Jan 2012 - 
TL;DR: In this article, a review of the evolution of transition-metal oxide thin-film fabrication is presented, particularly with emphasis on transition metal oxide thin films, their versatile physical properties, and their impact on the field of spintronics.
Journal ArticleDOI

On the sol–gel synthesis and thermal, structural, and magnetic studies of transition metal (Ni, Co, Mn) containing ZnO powders

TL;DR: In this paper, transition metal containing ZnO powders (Zn1−xMxO, 0≤x≤0.30; M = Ni, Mn, Co) have been synthesized by a sol-gel process using zinc acetate dihydrate, respective acetate and oxalic acid as precursors with ethanol as a solvent.
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Molecular beam epitaxial growth of topological insulators.

TL;DR: Molecular beam epitaxy technique was shown to not only provide an excellent method to prepare high quality topological insulators but show possibilities of engineering their electronic and spin structures as well, which is of significant importance for potential applications of topology insulators based on well-developed Si technology.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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