Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.Abstract:
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.read more
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Room temperature spintronic material—Mn-doped ZnO revisited
TL;DR: In this article, the first observations of ferromagnetic ordering above room temperature for small atomic percentages of Mn doped in ZnO were reported, with an average moment of 0.16μ B per Mn ion.
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Spin injection into semiconductors, physics and experiments
TL;DR: In this article, the authors review and extend the physics governing electrical spin injection into non-magnetic semiconductors and provide a critical evaluation of several approaches to circumvent the impedance mismatch that prohibits spin injection in the diffusive transport regime.
Journal ArticleDOI
Zinc oxide – analogue of GaN with new perspective possibilities
V. A. Karpina,V. I. Lazorenko,C. V. Lashkarev,V. D. Dobrowolski,L. I. Kopylova,V. A. Baturin,S. A. Pustovoytov,A. Ju. Karpenko,Sergei A. Eremin,Petro M. Lytvyn,V. P. Ovsyannikov,E. A. Mazurenko +11 more
TL;DR: In this article, PEMOCVD technology was used to deposit piezoelectric and highly transparent electroconductive ZnO films, and their properties were discussed.
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New diluted ferromagnetic semiconductor with Curie temperature up to 180 K and isostructural to the ‘122’ iron-based superconductors
Kan Zhao,Zhenghao Deng,Xiongjun Wang,W. Han,J. L. Zhu,Xiang Li,Qiufeng Liu,Rencheng Yu,Tatsuo Goko,Benjamin A. Frandsen,Lian Liu,Fanlong Ning,Fanlong Ning,Yasutomo J. Uemura,Hanna Dabkowska,Graeme Luke,Hubertus Luetkens,Elvezio Morenzoni,Sarah Dunsiger,Anatoliy Senyshyn,Peter Böni,Changqing Jin +21 more
TL;DR: The synthesis of a new diluted magnetic semiconductor is reported, which is isostructural to the 122 iron-based superconductors with the tetragonal ThCr( 2)Si(2) (122) structure, which makes them promising for the development of multilayer functional devices.
Journal ArticleDOI
Mn-doped ZnO nanocrystalline thin films prepared by ultrasonic spray pyrolysis
TL;DR: In this article, the influence of doping concentration on structural, optical and magnetic properties of thin ZnO thin films was studied in detail, and it was shown that the Mn2+ ions have substituted the Zn2+ ion without changing the wurtzite structure of Zn O. The films were characterized by X-ray diffraction, UV-vis spectrometer and superconducting quantum interference device magnetometer (SQUID).
References
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Journal ArticleDOI
Making Nonmagnetic Semiconductors Ferromagnetic
TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors
TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Hideo Ohno,Aidong Shen,Fumihiro Matsukura,Akira Oiwa,Akira Endo,Shingo Katsumoto,Yasuhiro Iye +6 more
TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
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Interaction Between the d Shells in the Transition Metals
TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.