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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Intrinsic and extrinsic origins of room temperature ferromagnetism in Ni-doped ZnO films

TL;DR: The structural, electrical and magnetic properties of Ni-doped ZnO films with different Ni concentrations (x = 0-0.11, x: Ni concentration) and thicknesses (d = 15-330 nm, d: film thickness) prepared by radio-frequency magnetron sputtering have been systematically investigated as discussed by the authors.
Journal ArticleDOI

Investigations on the nature of observed ferromagnetism and possible spin polarization in Co-doped anatase TiO2 thin films

TL;DR: In this article, high-quality epitaxial thin films of Co-doped anatase TiO 2 ~Co:TiO2) were grown epitaxially on SrTiO3 ~001! substrates by using pulsed laser deposition with in-situ reflection high-energy electron diffraction.
Journal ArticleDOI

Electron spin splitting in polarization-doped group-III nitrides

V. I. Litvinov
- 16 Oct 2003 - 
TL;DR: In this article, the spin-orbit splitting energy in GaN/AlGaN heterostructures has been calculated and shown to have the same order of magnitude as in InGaAs-based III-V materials, due to strong polarization field at the interface and polarization-induced doping.
Journal ArticleDOI

Room temperature ferromagnetism in chemically synthesized ZnO rods

TL;DR: In this paper, structural and magnetic properties of pure ZnO rods using x-ray diffraction (XRD), magnetization hysteresis (M−H ) loop and near edge X-ray fine structure spectroscopy (NEXAFS) study at O K edge.
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Size-controlled ex-nihilo ferromagnetism in capped CdSe quantum dots

TL;DR: In this article, the authors reported the observation of room temperature ferromagnetism (RTFM) in CdSe quantum dots (QD) capped with TOPO (tri-n-octylphosphine oxide).
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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