Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.Abstract:
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.read more
Citations
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Journal ArticleDOI
Ferromagnetic behaviour of ZnO: the role of grain boundaries
Boris B. Straumal,Svetlana G. Protasova,Svetlana G. Protasova,Andrei A. Mazilkin,Andrei A. Mazilkin,Eberhard Goering,Gisela Schütz,P. B. Straumal,Brigitte Baretzky +8 more
TL;DR: It is demonstrated in this review that ferromagnetism is not an intrinsic property of the ZnO crystalline lattice but is that of ZnNO/ZnO grain boundaries.
Journal ArticleDOI
Formation of the layered conductive magnet CrCl2(pyrazine)2 through redox-active coordination chemistry
Kasper S. Pedersen,Kasper S. Pedersen,Panagiota S. Perlepe,Michael L. Aubrey,Daniel N. Woodruff,Sebastian E. Reyes-Lillo,Anders Reinholdt,Laura Voigt,Zhongshan Li,Kasper A. Borup,Mathieu Rouzières,Dumitru Samohvalov,Dumitru Samohvalov,Fabrice Wilhelm,Andrei Rogalev,Jeffrey B. Neaton,Jeffrey R. Long,Rodolphe Clérac +17 more
TL;DR: It is suggested that the combination of redox-active ligands and reducing paramagnetic metal ions represents a general approach towards tuneable 2D materials that consist of charge-neutral layers and exhibit both long-range magnetic order and high electronic conductivity.
Journal ArticleDOI
Selective sensing of isoprene by Ti-doped ZnO for breath diagnostics
TL;DR: An inexpensive isoprene detector has been developed that could be easily incorporated into a portable breath analyzer for non-invasive monitoring of metabolic disorders (e.g. cholesterol) and can be detected accurately down to 5 ppb with high signal-to-noise ratio.
Journal ArticleDOI
Intrinsic ferromagnetism in wurtzite (Ga,Mn)N semiconductor
E. Sarigiannidou,Fabrice Wilhelm,Eva Monroy,Rose-Marie Galéra,Edith Bellet-Amalric,Andrei Rogalev,José Goulon,Joel Cibert,Henri Mariette +8 more
TL;DR: The structural quality of the samples grown by plasma-assisted molecular beam epitaxy is confirmed by X-ray diffraction and x-ray linear dichroism as discussed by the authors, and the Curie temperature of a (Ga,Mn)N sample with 6.3% Mn is $\ensuremath{\approx}8\phantom{\rule{0.3em}{0ex}}\mathrm{K}$ with a spontaneous magnetic moment of $2.4{\ensureMath{\mu}}B}$ per Mn at $2
Journal ArticleDOI
Magnetotransport in Co-doped ZnO nanowires.
TL;DR: Electrical and magnetotransport measurements were performed on individual Co-doped ZnO dilute magnetic semiconductor nanowires, and positive magnetoresistivity (MR) at low magnetic field and negative MR at higher magnetic field was observed.
References
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Journal ArticleDOI
Making Nonmagnetic Semiconductors Ferromagnetic
TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors
TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Hideo Ohno,Aidong Shen,Fumihiro Matsukura,Akira Oiwa,Akira Endo,Shingo Katsumoto,Yasuhiro Iye +6 more
TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI
Interaction Between the d Shells in the Transition Metals
TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.