Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.Abstract:
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.read more
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Ferromagnetic semiconductors: moving beyond (Ga,Mn)As
TL;DR: The recent development of MBE techniques for growth of III-V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, that is, electronics that exploit carrier spin polarization.
Journal ArticleDOI
Magnetic quantum dots: synthesis, spectroscopy, and magnetism of Co2+ - and Ni2+-doped ZnO nanocrystals.
TL;DR: Ferromagnetism with T(C) > 350 K is observed in aggregated nanocrystals of Co(2+):ZnO that unambiguously demonstrates the existence of intrinsic high-T(C), ferromagnetsism in this class of DMSs.
Journal ArticleDOI
Ferromagnetism of ZnO and GaN: A Review
C. Liu,F. Yun,Hadis Morkoç +2 more
TL;DR: In this article, a review of the recent progress in the theoretical and experimental studies of ZnO-and GaN-based DMSs is presented, focusing on the structural, optical, and magnetic properties of these materials.
Journal ArticleDOI
Magnetization vector manipulation by electric fields
Daichi Chiba,Maciej Sawicki,Maciej Sawicki,Yu Nishitani,Yoshinobu Nakatani,Fumihiro Matsukura,Hideo Ohno +6 more
TL;DR: It is shown that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As, allowing manipulation of the magnetization direction.
Journal ArticleDOI
Semiconductor Spintronics
TL;DR: Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role as mentioned in this paper, and is an emerging research field of electronics: spintronics devices are based on a spin control of electronics, or on an electrical and optical control of spin or magnetism.
References
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Journal ArticleDOI
Making Nonmagnetic Semiconductors Ferromagnetic
TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors
TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Hideo Ohno,Aidong Shen,Fumihiro Matsukura,Akira Oiwa,Akira Endo,Shingo Katsumoto,Yasuhiro Iye +6 more
TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI
Interaction Between the d Shells in the Transition Metals
TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.