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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Journal ArticleDOI

ZnO–CoO solid solution thin films

TL;DR: In this article, an alternating deposition (AD) method was employed for doping ZnO(Zn1−xCoxO) and Co, codoped Zn2+ in order to enhance homogeneous substitution.
Journal ArticleDOI

Absence of room temperature ferromagnetism in bulk Mn-doped ZnO

TL;DR: In this article, structural and magnetic properties have been studied for polycrystalline Zn1−xMnxO (x=0.02,0.03,0,05).
Journal ArticleDOI

Fabrication, magnetic properties, and electronic structures of nanoscale zinc-blende MnAs dots (invited)

TL;DR: In this article, the zinc-blende MnAs dots were successfully fabricated on a sulfur-passivated GaAs (001) surface by molecular-beam epitaxy and the crystalline structure was not the same as that of bulk MnAs with NiAs-type hexagonal structure, but of zincblende type.
Journal ArticleDOI

Origin of ferromagnetic response in diluted magnetic semiconductors and oxides

TL;DR: In this paper, the origin of the ferromagnetic response of diluted magnetic semiconductors and diluted magnetic oxides as well as in some nominally magnetically undoped materials is discussed.
Journal ArticleDOI

Enhancement of ferromagnetic properties in Zn1−xCoxO by additional Cu doping

TL;DR: In this paper, the effect of Co-doped ZnO samples fabricated by the standard solid-state reaction method is reported. And the implication of the effects of Cu doping in bulk Zn0.98Co0.02O is also discussed.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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