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Journal ArticleDOI

Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Citations
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Journal ArticleDOI

Observation of room temperature ferromagnetism with giant magnetic moment based on Zn1−xCrxO thin films grown on Si(111) substrate via 1,2-dihydroxyethane modified sol-gel dip-coating technique

TL;DR: In this paper, the authors reported on the synthesis of Zn 1−x Cr x O (0.01≤x≤0.09) thin films grown on Si (111) substrate via 1,2-dihydroxyethane modified sol-gel dip-coating technique for spintronic applications.
Patent

Mg-Zn oxide tunnel barriers and method of formation

TL;DR: ZnMg oxide tunnel barriers are grown which, when sandwiched between ferri- or ferromagnetic layers, form magnetic tunnel junctions exhibiting high tunneling magnetoresistance (TMR) as discussed by the authors.
Journal ArticleDOI

Magnetic and optical properties of Mn-doped BaSnO3

TL;DR: In this paper, powder X-ray diffraction patterns of polycrystalline samples of BaSn1−xMnxO3 were found to be free of secondary phases using solid state reaction method.
Journal ArticleDOI

First-principles LDA + U calculations of the Co-doped ZnO magnetic semiconductor

TL;DR: In this article, the electronic structure of magnetic semiconductors was investigated by means of density functional calculations using local density approximation (LDA) and local density approximator (LDA+U) schemes.
Journal ArticleDOI

Room Temperature Ferromagnetism and Optical Limiting in V 2 O 5 Nanoflowers Synthesized by a Novel Method

TL;DR: In this paper, the authors report on the observation of room temperature ferromagnetic properties at 300, 200, and 100 K observed from a hysteresis loop and propose a growth mechanism of the flowers and attribute the origin of ferromagnetism to the introduction of oxygen vacancies.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
Journal ArticleDOI

Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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