Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.Abstract:
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.read more
Citations
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Journal ArticleDOI
Concentration Dependence of Oxygen Vacancy on the Magnetism of CeO2 Nanoparticles
Shih-Yun Chen,Chi-Hang Tsai,Mei-Zi Huang,Der-Chung Yan,Tzu-Wen Huang,Alexandre Gloter,Chi-Liang Chen,Hong-Ji Lin,Chien-Te Chen,Chung-Li Dong +9 more
TL;DR: In this paper, a strong dependence of the magnetism of CeO2 nanoparticles on the concentration of oxygen vacancies was demonstrated, which indicated that the bounded magnetic polarons are more important to magnetism than is oxygen-mediated exchange.
Journal ArticleDOI
Sample preparation and annealing effects on the ferromagnetism in Mn-doped ZnO
TL;DR: In this paper, a metastable ferromagnetic phase and its stability under varying temperatures and atmospheres were investigated for Mn-doped ZnO and showed that with an increase of annealing temperature, the ferromagnetism observed at room temperature in the low-temperature-sintered samples is gradually suppressed and finally completely removed.
Journal ArticleDOI
Structure and optical properties of ZnO:V thin films with different doping concentrations
Liwei Wang,Liwei Wang,Liwei Wang,Lijian Meng,Lijian Meng,Vasco Teixeira,Shingeng Song,Zheng Xu,Xurong Xu +8 more
TL;DR: In this paper, a series of ZnO thin films doped with various vanadium concentrations were prepared on glass substrates by direct current reactive magnetron sputtering and the results of the X-ray diffraction (XRD) showed that the films with doping concentration less than 10 at.% have a wurtzite structure and grow mainly along the c-axis orientation.
Journal ArticleDOI
New Materials for Spintronics
Scott A. Chambers,Young K. Yoo +1 more
TL;DR: In this paper, the authors present recent results from their laboratory focused on the MBE synthesis and properties of these ferromagnetic oxide semiconductors, and present the detailed materials properties and mechanism(s) of magnetism in these systems have been elusive.
Journal ArticleDOI
Room-temperature ferromagnetism in Cu doped GaN nanowires.
Han Kyu Seong,Jae Young Kim,Ju Jin Kim,Seung Cheol Lee,So Ra Kim,Ungkil Kim,Tae Eon Park,Heon Jin Choi +7 more
TL;DR: It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments, which suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.
References
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Journal ArticleDOI
Making Nonmagnetic Semiconductors Ferromagnetic
TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors
TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Hideo Ohno,Aidong Shen,Fumihiro Matsukura,Akira Oiwa,Akira Endo,Shingo Katsumoto,Yasuhiro Iye +6 more
TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI
Interaction Between the d Shells in the Transition Metals
TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.