Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.Abstract:
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.read more
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Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films
TL;DR: In this paper, the magnetic properties and intrinsic ferromagnetism of transition-metal (TM)-doped ZnO films, which are typical diluted magnetic oxides used in spintronics, are discussed.
Journal ArticleDOI
Review on spintronics: Principles and device applications
Atsufumi Hirohata,Keisuke Yamada,Yoshinobu Nakatani,Lucian Prejbeanu,Bernard Dieny,Philipp Pirro,Burkard Hillebrands +6 more
TL;DR: In this paper, the spin degree of freedom of electrons and/or holes, which can also interact with their orbital moments, is described with respect to the spin generation methods as detailed in Sections 2-~-9.
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Properties of GaN and related compounds studied by means of Raman scattering
TL;DR: In the last decade, a rapid and significant development in Raman scattering experiments on GaN and related nitride compounds has been seen as discussed by the authors, where the Γ-point phonon frequencies have been identified for both cubic and hexagonal structures of binary compounds of GaN.
Journal ArticleDOI
Co-metal clustering as the origin of ferromagnetism in Co-doped ZnO thin films
TL;DR: In this paper, the origin of ferromagnetism in ZnO-based systems was investigated using Co-doped ZnOs thin films as prototypical examples of II-VI-based diluted magnetic semiconductors.
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High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties
Zhengwu Jin,Tomoteru Fukumura,Megumi Kawasaki,K. Ando,Hidekazu Saito,Takashi Sekiguchi,Y.-Z. Yoo,Makoto Murakami,Yuji Matsumoto,T. Hasegawa,Hideomi Koinuma +10 more
TL;DR: Combinatorial laser molecular-beam epitaxy method was employed to fabricate epitaxial ZnO thin films doped with all the 3d transition metal (TM) ions in a high throughput fashion as discussed by the authors.
References
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Journal ArticleDOI
Making Nonmagnetic Semiconductors Ferromagnetic
TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors
TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
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(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Hideo Ohno,Aidong Shen,Fumihiro Matsukura,Akira Oiwa,Akira Endo,Shingo Katsumoto,Yasuhiro Iye +6 more
TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
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Interaction Between the d Shells in the Transition Metals
TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.