Journal ArticleDOI
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.Abstract:
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.read more
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Electronic structure of Cu-doped ZnO thin films by x-ray absorption, magnetic circular dichroism, and resonant inelastic x-ray scattering
Pardeep K. Thakur,Valentina Bisogni,Julio C. Cezar,N. B. Brookes,Giacomo Claudio Ghiringhelli,Sanjeev Gautam,Keun Hwa Chae,M. Subramanian,Ramasamy Jayavel,K. Asokan +9 more
TL;DR: In this article, the electronic structure of Cu-doped ZnO thin films, synthesized with a nominal composition of Zn1−xCuxO (x=003, 005, 007, and 010) by using spray pyrolysis method, has been investigated using near-edge x-ray absorption fine structure (NEXAFS) experiments at the O K- and the Cu L 3,2-edges and resonant inelastic xray scattering (RIXS) measurements at Cu
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General control of transition-metal-doped GaN nanowire growth: toward understanding the mechanism of dopant incorporation.
TL;DR: It is shown that the doping concentration dependence on DeltaCFSE allows for the prediction of achievable doping concentrations for different dopant ions in GaN NWs, and for a rational choice of a suitable dopant-ion precursor.
Journal ArticleDOI
High-temperature ferromagnetism in pulsed-laser deposited epitaxial (Zn,Mn)O thin films: Effects of substrate temperature
Aswini K. Pradhan,Kai Zhang,Soumya R. Mohanty,J.B. Dadson,D. Hunter,Jun Zhang,David J. Sellmyer,Utpal N. Roy,Yonggang Cui,Arnold Burger,S. Mathews,Boby Joseph,B.R. Sekhar,B. K. Roul +13 more
TL;DR: In this article, the authors reported remarkable room-temperature ferromagnetic properties in epitaxial (Zn,Mn)O films grown by a pulsed-laser deposition technique using high-density targets.
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A first-principle study of half-metallic ferrimagnetism in the CoFeTiSb quaternary Heusler compound
TL;DR: In this article, first-principle calculations of the structural, electronic and magnetic properties of CoFeTiSb quaternary Heusler compound were performed using full-potential linearized augmented plane wave (FP-LAPW) scheme within the GGA.
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Ferromagnetic semiconductor GaMnAs
TL;DR: In this paper, the authors review recent research and accomplishments regarding magnetic anisotropy and interlayer coupling properties of GaMnAs-based multilayer structures, with an eye on their potential role in practical devices.
References
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Journal ArticleDOI
Making Nonmagnetic Semiconductors Ferromagnetic
TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors
TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI
(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs
Hideo Ohno,Aidong Shen,Fumihiro Matsukura,Akira Oiwa,Akira Endo,Shingo Katsumoto,Yasuhiro Iye +6 more
TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI
Interaction Between the d Shells in the Transition Metals
TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.