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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Citations
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Journal ArticleDOI

Synthesis and magnetic properties of Co-doped ZnO nanowires

TL;DR: In this paper, an electrochemical approach to the synthesis of Co-doped ZnO nanowires arrays on conducting substrates at 90 °C was reported, which exhibited a broadened band-edge emission at 386nm with a strong emission band around 550nm.
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UV optical properties of ferromagnetic Mn-doped ZnO thin films grown by PLD

TL;DR: In this article, the incorporation of 3D transition metals into ZnO can produce ferromagnetism above room temperature, and the ferromagnetic behavior is correlated to their textured structure.
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Demonstration of Rashba spin splitting in GaN-based heterostructures

TL;DR: The circular photogalvanic effect, induced by infrared radiation, has been observed in (0001)-oriented n-GaN low dimensional structures as discussed by the authors, which suggests the presence of a sizeable Rashba type of spin splitting, caused by the built-in asymmetry at the AlGaN∕GaN interface.
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X-ray absorption and magnetic circular dichroism characterizations of Mn doped ZnO

TL;DR: In this article, near-edge x-ray absorption fine structure (NEXAFS) and X-ray magnetic circular dichroism (XMCD) experiments on well characterized Mn doped ZnO thin films that show ferromagnetism at room temperature were conducted.
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Effects of hydrogenated annealing on structural defects, conductivity, and magnetic properties of V-doped ZnO powders

TL;DR: In this paper, the structure, electrical properties, and magnetism of 7.5% V-doped ZnO powders that were hydrogenated annealed at 300, 500, and 700°C have been systematically investigated.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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