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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Journal ArticleDOI

Room-temperature ferromagnetism in (Mn, N)-codoped ZnO thin films prepared by reactive magnetron cosputtering

TL;DR: In this article, the mechanism of ferromagnetic coupling in codoped ZnO is discussed based on a bound magnetic polaron model, which shows significant ferromagnetism with Curie temperature above 300K.
Journal ArticleDOI

Synthesis and characterization of nano ZnS doped with Mn

TL;DR: In this article, the authors synthesize nanocrystalline samples of Zn1-xMnxS (x = 0.0, 0.02, and 0.04) by chemical precipitation method and characterized for magnetism.
Journal ArticleDOI

Magnetic order in Co-doped and (Mn, Co) codoped ZnO thin films by pulsed laser deposition

TL;DR: In this article, three doped ZnO thin films with well wurtzite structures were fabricated on Al2O3 (0001) by pulsed laser deposition, and they showed room temperature (290 K) ferromagnetism, with the saturated magnetic moments of 0.08μb/Co, 0.17μB/Co and 0.19μB/( 0.5Co+0.5Mn), respectively.
Journal ArticleDOI

Spin-orbit torques: Materials, mechanisms, performances, and potential applications

TL;DR: In this article, the authors provide a comprehensive review of recent progress in SOT in various materials, including both spin sources and magnetic functional layers, and discuss its promising applications for nonvolatile SOT-magnetic random access memory and other device configurations.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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