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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Journal ArticleDOI

Magnetic and electrical properties of p-type Mn-doped CuCrO2 semiconductors

TL;DR: In this article, the valence state of the Mn ions in the CuCr1−xMnxO2 samples was identified by analysing their lattice parameters, their electrical properties and their x-ray photoelectron spectra.
Journal ArticleDOI

How to make semiconductors ferromagnetic: a first course on spintronics

TL;DR: The rapidly developing field of ferromagnetism in diluted magnetic semiconductors, where a semiconductor host is magnetically doped by transition metal impurities to produce a ferromagnetic semiconductor (e.g. Ga 1− x Mn x As with x ≈ 1 − 10%), is discussed with the emphasis on elucidating the physical mechanisms underlying the magnetic properties.
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Systematic first principle study of physical properties of Cd0.75Ti0.25Z (Z = S, Se,Te) magnetic semiconductors using mBJ functional

TL;DR: In this paper, structural, elastic, electronic properties of Cd 0.75 Ti 0.25 Z (Z = S, Se, Te) alloys were investigated to reveal the thermodynamic stability in the ferromagnetic state, further confirmed in terms of the enthalpy of formation ( ΔH ) and the cohesive energy.
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Curie-temperature enhancement of electron-doped Sr 2 FeMoO 6 perovskites studied by photoemission spectroscopy

TL;DR: In this paper, the electronic structure of electron-doped half-metallic ferromagnetic perovskites has been investigated using high-resolved valence-band photoemission spectroscopy (PES).
Journal ArticleDOI

Intra-shell luminescence of transition-metal-implanted zinc oxide nanowires

TL;DR: Transmission electron microscopy analysis of implanted and annealed zinc oxide nanowires shows a strongly damaged zinc oxide lattice but no formation of transition metal-rich secondary phases.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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