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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Citations
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Journal ArticleDOI

Magnetic anisotropy of Co2+ as signature of intrinsic ferromagnetism in ZnO:Co.

TL;DR: In this paper, the magnetic properties of thoroughly characterized Zn(1-x)Co(x)O epitaxial thin films, with low Co concentration, x = 0.003-0.005, were reported.
Journal ArticleDOI

Electronic structure and spin polarization of Mn x Ga 1 − x N

TL;DR: In this article, the electronic structure of the dilute magnetic semiconductor with a realistic $x=0.063,$ in its ordered ferromagnetic phase has been investigated and it has been shown that the introduction of Mn results in the formation of a 100% spin polarized 1.5 \mathrm{eV}-wide impurity band, primarily due to hybridization of Mn $3d$ and N $2p$ orbitals.
Journal ArticleDOI

Epitaxial growth of ZnO films

TL;DR: In this article, the authors review the growth of ZnO epitaxial films by PLD, MBE, MOCVD and sputtering under their various aspects, substrates, precursors, reaction chemistry, assessment of the layers etc.
Journal ArticleDOI

Development of high-temperature ferromagnetism in Sn O 2 and paramagnetism in SnO by Fe doping

TL;DR: In this article, the development of room-temperature ferromagnetism in chemically synthesized powder samples of semiconductor oxides was reported, suggesting that emerging magnetic properties of these systems are hostSn}{\mathrm{O}}{2}$ suggesting that strong structure-magnetic property relationship.
Journal ArticleDOI

Large magnetoresistance using hybrid spin filter devices

TL;DR: In this paper, a magnetic spin filter is used to create a magnetoresistive tunnel device, somewhat analogous to an optical polarizer analyzer configuration, which yields a previously unobserved magnetoresistance effect, exceeding 100%.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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