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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Journal ArticleDOI

Electron effective mass in n-type electron-induced ferromagnetic semiconductor (In,Fe)As: Evidence of conduction band transport

TL;DR: In this article, the thermoelectric Seebeck effect was used to estimate the electron effective mass (m*) in n-type carrier-induced ferromagnetic semiconductor (In,Fe)As.
Journal ArticleDOI

Structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering

TL;DR: In this paper, the structural analysis of ferromagnetic Mn-doped ZnO thin films was performed using transmission electron microscopy (TEM), high-resolution x-ray diffraction, and Rutherford backscattering spectroscopy (RBS) measurements.
Journal ArticleDOI

Oxygen vacancies induced room temperature ferromagnetism in hydrogenated Mn-doped ZnO

TL;DR: In this paper, the effect of hydrogenation time (tH) on the structural and magnetic properties of Zn0.98Mn 0.02O synthesized via standard solid state reaction route has been explored.
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Absence of ferromagnetic order in high quality bulk Co-doped ZnO samples

TL;DR: In this article, a detailed microstructural analysis was carried out to investigate alternative sources of ferromagnetism, such as secondary phases and nanocrystals embedded in the bulk material.
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High-quality solution-based Co and Cu co-doped ZnO nanocrystalline thin films: Comparison of the effects of air and argon annealing environments

TL;DR: In this paper, a solution-based high-quality Co and Cu co-doped ZnO thin films that were annealed in air and argon were investigated in terms of their structural, optical and magnetic properties.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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