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Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

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TLDR
Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1)-Mn (x)Te and is used to predict materials with T (C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.
Abstract
Ferromagnetism in manganese compound semiconductors not only opens prospects for tailoring magnetic and spin-related phenomena in semiconductors with a precision specific to III-V compounds but also addresses a question about the origin of the magnetic interactions that lead to a Curie temperature (T(C)) as high as 110 K for a manganese concentration of just 5%. Zener's model of ferromagnetism, originally proposed for transition metals in 1950, can explain T(C) of Ga(1-)(x)Mn(x)As and that of its II-VI counterpart Zn(1-)(x)Mn(x)Te and is used to predict materials with T(C) exceeding room temperature, an important step toward semiconductor electronics that use both charge and spin.

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Journal ArticleDOI

Epitaxial Growth and Properties of Doped Transition Metal and Complex Oxide Films

TL;DR: The detailed science and technology of crystalline oxide film growth using vacuum methods is reviewed and discussed with an eye toward gaining fundamental insights into the relationships between growth process and parameters, film and interface structure and composition, and electronic, magnetic and photochemical properties.
Journal ArticleDOI

Effect of reducing atmosphere on the magnetism of Zn1?xCoxO (0?x?0.10) nanoparticles

TL;DR: The essential ingredient in achieving room temperature ferromagnetism in these Zn(1-x)Co(x)O nanoparticles was found to be the presence of additional carriers generated by the presenceof the oxygen vacancies.
Journal ArticleDOI

Oxides, Oxides, and More Oxides: High-κ Oxides, Ferroelectrics, Ferromagnetics, and Multiferroics

TL;DR: In this article, the authors review and critique the recent developments on multifunctional oxide materials, which are gaining a good deal of interest, focusing mainly on high-κ dielectric, ferroelectric, magnetic and multiferroic materials.
Journal ArticleDOI

Magnetic and optical properties of GaMnN magnetic semiconductor

TL;DR: In this article, microcrystalline Ga1−xMnxN samples with Mn content up to x=0.005 were grown by an ammonothermal method and were studied using various techniques.
References
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Journal ArticleDOI

Making Nonmagnetic Semiconductors Ferromagnetic

TL;DR: The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.
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Diluted magnetic semiconductors

TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
Journal ArticleDOI

(Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

TL;DR: In this article, a new GaAs-based diluted magnetic semiconductor, (Ga,Mn)As, was prepared by molecular beam epitaxy and the lattice constant was determined by x-ray diffraction and shown to increase with the increase of Mn composition, x.
Journal ArticleDOI

Interaction Between the d Shells in the Transition Metals

TL;DR: In this paper, it is shown that the spin coupling between the incomplete $d$ shells and the conduction electrons leads to a tendency for a ferromagnetic alignment of $d $ spins.
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