Single-step deposition of high-mobility graphene at reduced temperatures
David A. Boyd,Wei-Hsiang Lin,Chen-Chih Hsu,Marcus Teague,C.-C. Chen,Yi-Chen Lo,W.-Y. Chan,Wei-Bin Su,T.-C. Cheng,Chia-Seng Chang,Chih-I Wu,Nai-Chang Yeh +11 more
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TLDR
A plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures (<420 °C), and in a matter of minutes, indicates that elevated temperatures and crystalline substrates are not necessary for synthesizing high-quality graphene.Abstract:
Current methods of chemical vapour deposition (CVD) of graphene on copper are complicated by multiple processing steps and by high temperatures required in both preparing the copper and inducing subsequent film growth. Here we demonstrate a plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures (o420C), and in a matter of minutes. Growth on copper foils is found to nucleate from arrays of well-aligned domains, and the ensuing films possess sub-nanometre smoothness, excellent crystalline quality, low strain, few defects and roomtemperature electrical mobility up to (6.0±1.0) � 10 4 cm 2 V � 1 s � 1 , better than that of large,read more
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Graphene and two-dimensional materials for silicon technology.
Deji Akinwande,Cedric Huyghebaert,Ching-Hua Wang,Martha I. Serna,Stijn Goossens,Lain-Jong Li,H.-S. Philip Wong,H.-S. Philip Wong,Frank H. L. Koppens,Frank H. L. Koppens +9 more
TL;DR: The opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems are reviewed, and the prospects for computational and non-computational applications are considered.
Journal ArticleDOI
Promises and prospects of two-dimensional transistors
TL;DR: In this article, the authors review the promise and current status of 2D transistors, and emphasize that widely used device parameters (such as carrier mobility and contact resistance) could be frequently misestimated or misinterpreted, and may not be the most reliable performance metrics for benchmarking two-dimensional transistors.
Production and processing of graphene and related materials
Claudia Backes,Claudia Backes,Amr M. Abdelkader,Concepción Alonso,Amandine Andrieux-Ledier,Raul Arenal,Raul Arenal,Jon Azpeitia,Nilanthy Balakrishnan,Luca Banszerus,Julien Barjon,Ruben Bartali,Sebastiano Bellani,Claire Berger,Claire Berger,Reinhard Berger,M.M. Bernal Ortega,Carlo Bernard,Peter H. Beton,André Beyer,Alberto Bianco,Peter Bøggild,Francesco Bonaccorso,Gabriela Borin Barin,Cristina Botas,Rebeca A. Bueno,Daniel Carriazo,Andres Castellanos-Gomez,Meganne Christian,Artur Ciesielski,Tymoteusz Ciuk,Matthew T. Cole,Jonathan N. Coleman,Camilla Coletti,Luigi Crema,Huanyao Cun,Daniela Dasler,Domenico De Fazio,Noel Díez,Simon Drieschner,Georg S. Duesberg,Roman Fasel,Roman Fasel,Xinliang Feng,Alberto Fina,Stiven Forti,Costas Galiotis,Costas Galiotis,Giovanni Garberoglio,Jorge M. Garcia,Jose A. Garrido,Marco Gibertini,Armin Gölzhäuser,Julio Gómez,Thomas Greber,Frank Hauke,Adrian Hemmi,Irene Hernández-Rodríguez,Andreas Hirsch,Stephen A. Hodge,Yves Huttel,Peter Uhd Jepsen,I. Jimenez,Ute Kaiser,Tommi Kaplas,HoKwon Kim,Andras Kis,Konstantinos Papagelis,Konstantinos Papagelis,Kostas Kostarelos,Aleksandra Krajewska,Kangho Lee,Changfeng Li,Harri Lipsanen,Andrea Liscio,Martin R. Lohe,Annick Loiseau,Lucia Lombardi,María Francisca López,Oliver Martin,Cristina Martín,Lidia Martínez,José A. Martín-Gago,José I. Martínez,Nicola Marzari,Alvaro Mayoral,Alvaro Mayoral,John B. McManus,Manuela Melucci,Javier Méndez,Cesar Merino,Pablo Merino,Andreas Meyer,Elisa Miniussi,Vaidotas Miseikis,Neeraj Mishra,Vittorio Morandi,Carmen Munuera,Roberto Muñoz,Hugo Nolan,Luca Ortolani,A. K. Ott,A. K. Ott,Irene Palacio,Vincenzo Palermo,John Parthenios,Iwona Pasternak,Amalia Patanè,Maurizio Prato,Maurizio Prato,Henri Prevost,Vladimir Prudkovskiy,Nicola M. Pugno,Nicola M. Pugno,Nicola M. Pugno,Teófilo Rojo,Antonio Rossi,Pascal Ruffieux,Paolo Samorì,Léonard Schué,Eki J. Setijadi,Thomas Seyller,Giorgio Speranza,Christoph Stampfer,I. Stenger,Wlodek Strupinski,Yuri Svirko,Simone Taioli,Simone Taioli,Kenneth B. K. Teo,Matteo Testi,Flavia Tomarchio,Mauro Tortello,Emanuele Treossi,Andrey Turchanin,Ester Vázquez,Elvira Villaro,Patrick Rebsdorf Whelan,Zhenyuan Xia,Rositza Yakimova,Sheng Yang,G. Reza Yazdi,Chanyoung Yim,Duhee Yoon,Xianghui Zhang,Xiaodong Zhuang,Luigi Colombo,Andrea C. Ferrari,Mar García-Hernández +148 more
TL;DR: In this article, the authors present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures, adopting a 'hands-on' approach, providing practical details and procedures as derived from literature and from the authors' experience, in order to enable the reader to reproduce the results.
Journal ArticleDOI
Sensitive and selective NO2 gas sensor based on WO3 nanoplates
S.S. Shendage,Vithoba L. Patil,S.A. Vanalakar,Sarita P. Patil,N.S. Harale,J.L. Bhosale,JunHo Kim,Pramod S. Patil +7 more
TL;DR: In this article, the authors used a simple and a facile hydrothermal technique to fabricate NO 2 gas sensor using thin films of tungsten oxide (WO 3 ) grown directly on to a soda-lime glass substrate without assistance of any seed layer.
Journal ArticleDOI
Two-dimensional transistors beyond graphene and TMDCs
TL;DR: The recent efforts and progress in exploring novel 2DSCs beyond graphene and TMDCs for ultra-thin body transistors are reviewed, discussing the merits, limits and prospects of each material.
References
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Journal ArticleDOI
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