Patent
System comprising a semiconductor device and structure
Zvi Or-Bach,Brian Cronquist,Israel Beinglass,Jan Lodewijk de Jong,Deepak C. Sekar,Zeev Wurman +5 more
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TLDR
In this article, a system includes a semiconductor device consisting of a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single-crystalline silicon layer.Abstract:
A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.read more
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Patent
Semiconductor device and structure
Zvi Or-Bach,Brian Cronquist +1 more
TL;DR: In this paper, a first layer and a second layer of layer-transferred mono-crystallized silicon, where the first layer comprises a first plurality of horizontally-oriented transistors, and the second layer includes a second plurality of vertically oriented transistors.
Patent
Method for fabrication of a semiconductor device and structure
TL;DR: In this article, a method to process an Integrated Circuit device including processing a first layer of first transistors, then processing a metal layer overlaying the first layer and providing at least one connection to the first Transistors, and finally processing a second layer of second transistors overlaying a first metal layer, wherein the second metal layer is connected to provide power to at least 1 of the second Transistors.
Patent
Semiconductor devices and methods of manufacturing the same
TL;DR: In this article, a gate pattern and a source/drain region are formed at both sides of the gate pattern, and the first insulation layer pattern having an exposed portion of the source/drain region, forming a silicide layer on the exposed source and drain region, and forming a second insulation layer covering the entire surface of the substrate.
Patent
3D semiconductor device and structure
TL;DR: In this article, an Integrated Circuit device including a first layer including first single crystal transistors; a second layer overlaying the first layer, the second layer including second single-crystal transistors, where the second-layer thickness is less than one micron, where a plurality of the first transistors is circumscribed by a first dice lane of at least 10 microns width, and there are no first conductive connections to the plurality of transistors that cross the first-dice lane.
Patent
Semiconductor structure and method for manufacturing the same
TL;DR: In this article, a method for manufacturing a semiconductor structure, comprising of a mask layer to cover the metal interconnect liners and forming openings, which expose the metal internals on the mask layer, is presented.
References
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Patent
Design structures for high-voltage integrated circuits
Michel J. Abou-Khalil,Robert J. Gauthier,Tom C. Lee,Junjun Li,Christopher S. Putnam,Souvick Mitra +5 more
TL;DR: In this article, the first and second gate electrodes and the semiconductor body are formed from the monocrystalline SOI layer of the SOI substrate, and the dielectric layers are formed by defining trenches in the SoI layer and filling the trenches with a Dielectric material, which may occur concurrently with a process forming other device isolation regions.
Patent
Method for producing patterning alignment marks in oxide
TL;DR: In this article, a denuded zone in silicon has been created during the normal process sequence, in order to avoid the formation of deleterious oxygen precipitates, prior to the creation of the denuded zones, low temperature processing had to be used.
Patent
Method for electrically conductive metal-to-metal bonding
TL;DR: In this paper, a method for electrically conductive metal-to-metal bonding is described, which consists of depositing a thin layer of titanium on a first surface of a first metal surface and placing the first surface in contact with a first surfaces of a second metal surface in an inert ambiance.
Patent
Method for producing multilayers on a substrate
Aurelie Tauzin,Philippe Gilet +1 more
TL;DR: In this article, a method for producing a multilayer on a receiving substrate, including the formation of an initial substrate comprising a first material layer formed on the surface of a supporting substrate made of a second material, was described.
Patent
Two phase charge-coupled semiconductor device
TL;DR: In this paper, a semiconductor device which utilizes the mobility of charge in depletion regions created at the surface of semiconductor body to transmit information and which comprises an electrode array with a single type conductivity is described.