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Patent

System comprising a semiconductor device and structure

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TLDR
In this article, a system includes a semiconductor device consisting of a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single-crystalline silicon layer.
Abstract
A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

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Patent

Integrated circuit and computer-implemented method for designing an integrated circuit

Weng Li-Chiu
TL;DR: In this article, an integrated circuit with a substrate having a first cell region and a second cell region is presented. But the method is not computer-implemented and it is not suitable for the use of a single-input single-output (SIMO) circuit.
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Built-in self test for silicon photonics device

TL;DR: In this article, the authors present an integrated system on chip device with a self-test block configured on the silicon photonics device and to be operable during a test operation, the self test block comprising a broad band source configured to emit electromagnetic radiation from 1200 to 1400 nm or 1500 to 1600 nm to a multiplexer device.
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Magnetic memory cells, methods of fabrication, semiconductor devices, memory systems, and electronic systems

TL;DR: In this paper, a getter material proximate to the secondary oxide region is formulated and configured to remove oxygen from the SOP, reducing an oxygen concentration and an electrical resistance of the secondary SOP.
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Power gate placement techniques in three-dimensional (3D) integrated circuits (ICs) (3DICs)

TL;DR: In this article, power gate placement techniques in 3D integrated circuits (ICs) (3DICs), are disclosed, where the power gating circuits are consolidated in a tier closest to a voltage source, which allows a distance between the voltage source and the power gate circuits to be minimized.
Patent

Method for thin die-to-wafer bonding

TL;DR: In this article, a method for bonding a die to a base technology wafer is described, which includes: providing a device wafer having a front, back, at least one side, and at least 1 TSV, wherein the back contains a substrate material.
References
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Book

Digital Systems Testing and Testable Design

TL;DR: The new edition of Breuer-Friedman's Diagnosis and Reliable Design ofDigital Systems offers comprehensive and state-ofthe-art treatment of both testing and testable design.
Journal ArticleDOI

Nanowire transistors without junctions

TL;DR: A new type of transistor in which there are no junctions and no doping concentration gradients is proposed and demonstrated, which has near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
Journal ArticleDOI

Designing reliable systems from unreliable components: the challenges of transistor variability and degradation

Shekhar Borkar
- 01 Nov 2005 - 
TL;DR: This article discusses effects of variability in transistor performance and proposes microarchitecture, circuit, and testing research that focuses on designing with many unreliable components (transistors) to yield reliable system designs.
Patent

Three dimensional structure memory

TL;DR: The 3Dimensional Structure (3DS) Memory (100) as mentioned in this paper is a three-dimensional structure (3D) memory that allows physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized.
Patent

Transparent contacts for organic devices

TL;DR: In this paper, a multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds, and the devices are configured as stacked to provide a staircase profile whereby each device is separated from the other by a thin transparent conductive contact layer to enable light emanating from each of the devices to pass through the semitransparent contacts and through the lower device structures.