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System comprising a semiconductor device and structure

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TLDR
In this article, a system includes a semiconductor device consisting of a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single-crystalline silicon layer.
Abstract
A system includes a semiconductor device. The semiconductor device includes a first single crystal silicon layer comprising first transistors, first alignment marks, and at least one metal layer overlying the first single crystal silicon layer, wherein the at least one metal layer comprises copper or aluminum more than other materials; and a second single crystal silicon layer overlying the at least one metal layer. The second single crystal silicon layer comprises a plurality of second transistors arranged in substantially parallel bands. Each of a plurality of the bands comprises a portion of the second transistors along an axis in a repeating pattern.

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Patent

Connection arrangements for integrated lateral diffusion field effect transistors

TL;DR: In this paper, the authors proposed a lateral diffusion field effect transistor (LDFET) that includes a source, a drain and a gate, and a second LDFET with a source and a drain.
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SGT-including pillar-shaped semiconductor device and method for producing the same

TL;DR: In this paper, a SiO2 layer is formed on a side surface of the NiSi layer, and a wiring metal layer in the contact holes connects the SiSi layer and NiSi layers to each other.
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Data Storage with In-situ String-Searching Capabilities Comprising Three-Dimensional Vertical One-Time-Programmable Memory

Zhang Guobiao
TL;DR: In this article, a preferred data storage with in-situ string-searching capabilities comprises a plurality of storage-processing units (SPU), with each SPU comprising at least a three-dimensional vertical one-time-programmable memory (3D-OTPV) array vertically stacked above a pattern-processing circuit.
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Method for producing pillar-shaped semiconductor memory device

TL;DR: In this article, a method for producing a pillar-shaped semiconductor memory device includes forming a mask on a semiconductor substrate and etching to form semiconductor pillar on the substrate.
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Methods of forming semiconductor devices including tunnel barrier materials

TL;DR: In this article, the magnetic tunnel junctions of a semiconductor device are described and a method of forming the tunnel magnetoresistance of the magnetic cell structures is described, as well as the methods of forming these tunnel magnetoreduction junctions.
References
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Book

Digital Systems Testing and Testable Design

TL;DR: The new edition of Breuer-Friedman's Diagnosis and Reliable Design ofDigital Systems offers comprehensive and state-ofthe-art treatment of both testing and testable design.
Journal ArticleDOI

Nanowire transistors without junctions

TL;DR: A new type of transistor in which there are no junctions and no doping concentration gradients is proposed and demonstrated, which has near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
Journal ArticleDOI

Designing reliable systems from unreliable components: the challenges of transistor variability and degradation

Shekhar Borkar
- 01 Nov 2005 - 
TL;DR: This article discusses effects of variability in transistor performance and proposes microarchitecture, circuit, and testing research that focuses on designing with many unreliable components (transistors) to yield reliable system designs.
Patent

Three dimensional structure memory

TL;DR: The 3Dimensional Structure (3DS) Memory (100) as mentioned in this paper is a three-dimensional structure (3D) memory that allows physical separation of the memory circuits and the control logic circuit onto different layers such that each layer may be separately optimized.
Patent

Transparent contacts for organic devices

TL;DR: In this paper, a multicolor organic light emitting device employs vertically stacked layers of double heterostructure devices which are fabricated from organic compounds, and the devices are configured as stacked to provide a staircase profile whereby each device is separated from the other by a thin transparent conductive contact layer to enable light emanating from each of the devices to pass through the semitransparent contacts and through the lower device structures.