Journal ArticleDOI
A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs
TLDR
In this paper, the impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted for, and a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed.Abstract:
This paper for the first time presents a comprehensive computational modeling approach for AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different material interfaces on the energy band profile as well as parasitic charge across the epitaxial stack is modeled and studied. Furthermore, impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted in this paper. For the first time, surface states modeled as donor type traps were correlated with gate leakage. Moreover, a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed. Finally, impact of lattice and carrier heating is studied, while highlighting the relevance of carrier heating, lattice heating, and bulk traps over the device characteristics. In addition to this, modeling strategy for other critical aspects like parasitic charges, quantum effects, S/D Schottky contacts, and high field effects is presented.read more
Citations
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Journal ArticleDOI
Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs
TL;DR: In this article, the effect of carbon-doping in GaN buffer on the performance of AlGaN/GaN HEMTs is discussed. But the authors focus on the degradation of the breakdown voltage, leakage current, sheet charge density, and dynamic ONresistance.
Journal ArticleDOI
Novel Drain-Connected Field Plate GaN HEMT Designs for Improved V BD – R ON Tradeoff and RF PA Performance
TL;DR: In this paper, the breakdown behavior of drain-connected field plate-based GaN HEMTs was investigated and the proposed vertical and dual-field-plate designs were proposed to alleviate the channel electric field by uniformly distributing it vertically into the buffer region.
Journal ArticleDOI
Part II: Proposals to Independently Engineer Donor and Acceptor Trap Concentrations in GaN Buffer for Ultrahigh Breakdown AlGaN/GaN HEMTs
TL;DR: In this paper, a modified Si-doping profile in the GaN buffer is proposed to lower the Cdoping concentration near GaN channel to mitigate the adverse effects of acceptor traps.
Journal ArticleDOI
“Hole Redistribution” Model Explaining the Thermally Activated R ON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs
Nicolo Zagni,Alessandro Chini,Francesco Maria Puglisi,Matteo Meneghini,Gaudenzio Meneghesso,Enrico Zanoni,Paolo Pavan,Giovanni Verzellesi +7 more
TL;DR: In this paper, the authors show that the RON increase and decrease during stress and recovery experiments in carbon-doped AlGaN/GaN power metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs).
References
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Journal ArticleDOI
Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement
TL;DR: In this paper, an enhancement of punchthrough voltage in AlGaN/GaN high-electron-mobility transistors was presented by increasing the electron confinement in the transistor channel using an AlGAN buffer-layer structure.
Journal ArticleDOI
Influence of surface defect charge at AlGaN-GaN-HEMT upon Schottky gate leakage current and breakdown voltage
TL;DR: In this paper, the relationship between Schottky gate leakage current and the breakdown voltage of AlGaN-GaN high-electron mobility transistors (HEMTs) is discussed based on the newly introduced simple, yet useful, surface defect charge model.
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Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs
TL;DR: In this paper, high-electric-field degradation phenomena are investigated in GaN-capped AlGaN/GaN HEMTs by comparing experimental data with numerical device simulations.
Journal ArticleDOI
Barrier-Layer Scaling of InAlN/GaN HEMTs
Farid Medjdoub,Mohammed Alomari,J.-F. Carlin,M. Gonschorek,Eric Feltin,M. A. Py,Nicolas Grandjean,Erhard Kohn +7 more
TL;DR: In this article, the characteristics of high-electron mobility transistors with barrier thickness between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition, were discussed.
Journal ArticleDOI
Low Turn-On Voltage AlGaN/GaN-on-Si Rectifier With Gated Ohmic Anode
TL;DR: In this article, a novel AlGaN/GaN-on-Si rectifier with a gated ohmic anode has been proposed to reduce the turn-on voltage without breakdown-voltage degradation.