Journal ArticleDOI
A Comprehensive Computational Modeling Approach for AlGaN/GaN HEMTs
TLDR
In this paper, the impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted for, and a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed.Abstract:
This paper for the first time presents a comprehensive computational modeling approach for AlGaN/GaN high electron mobility transistors. Impact of the polarization charge at different material interfaces on the energy band profile as well as parasitic charge across the epitaxial stack is modeled and studied. Furthermore, impact of surface and bulk traps on two-dimensional electron gas, device characteristics, and gate leakage is accounted in this paper. For the first time, surface states modeled as donor type traps were correlated with gate leakage. Moreover, a new approach to accurately model the forward gate leakage in Schottky gate devices is proposed. Finally, impact of lattice and carrier heating is studied, while highlighting the relevance of carrier heating, lattice heating, and bulk traps over the device characteristics. In addition to this, modeling strategy for other critical aspects like parasitic charges, quantum effects, S/D Schottky contacts, and high field effects is presented.read more
Citations
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Journal ArticleDOI
Trap-Assisted and Stress Induced Safe Operating Area Limits of AlGaN/GaN HEMTs
TL;DR: In this article, a systematic investigation of safe operating area (SOA) limits in AlGaN/GaN HEMT using sub- $\mu \text{s}$ pulse characterization is performed.
Journal ArticleDOI
Interplay of Various Charge Sources in AlGaN/GaN Epi-Stack Governing HEMT Breakdown
Ankit Soni,Mayank Shrivastava +1 more
TL;DR: In this paper, the interplay of various charge sources (surface, polarization, and buffer) and their relative concentrations across the AlGaN/GaN epi-stack governing the electric field distribution and the breakdown mechanism in high electron mobility transistors (HEMTs) was revealed.
Journal ArticleDOI
Impact of Surface States and Aluminum Mole Fraction on Surface Potential and 2DEG in AlGaN/GaN HEMTs.
TL;DR: In this paper, a TCAD study of surface donor and analysis of electron concentration in the channel and 2DEG formation at AlGaN/GaN interface is presented, which involves an aluminum concentration variation from 5 to 50%.
Journal ArticleDOI
Design Guidelines and Performance Tradeoffs in Recessed AlGaN/GaN Schottky Barrier Diodes
TL;DR: In this paper, a comprehensive TCAD-based computational modeling approach is developed for GaN-based Schottky barrier diodes (SBDs) and an optimum recess design strategy has been presented and validated experimentally.
GaN Power Devices: Discerning Application-Specific Challenges and Limitations in HEMTs
TL;DR: This work presents a systematic study of lateral scaling optimization for high voltage devices to minimize figure of merit and maximize breakdown voltage, extended for low voltage devices (< 100 V, presenting results to optimize both lateral features and vertical features.
References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
Oliver Ambacher,B. E. Foutz,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,A. J. Sierakowski,William J. Schaff,L.F. Eastman,Roman Dimitrov,A. Mitchell,Martin Stutzmann +12 more
TL;DR: In this paper, a combination of high resolution x-ray diffraction, atomic force microscopy, Hall effect, and capacitance-voltage profiling measurements is used to calculate the polarization induced sheet charge bound at the AlGaN/GaN interfaces.
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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.
Journal ArticleDOI
Electron and hole mobilities in silicon as a function of concentration and temperature
TL;DR: In this paper, an analytical expression for the electron and hole mobility in silicon based on both experimental data and modified Brooks-Herring theory of mobility was derived, which allows one to obtain electron and holes mobility as a function of concentration up to \sim 10^{20} cm-3 in an extended and continuous temperature range (250-500 K) within ± 13 percent of the reported experimental values.
Journal ArticleDOI
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs
TL;DR: In this paper, the authors reported the highest reported microwave power density for undoped sapphire substrated AlGaN/GaN HEMT's on the same wafer.