Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
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Journal ArticleDOI
Review of Silicon Carbide Power Devices and Their Applications
TL;DR: The technology progress of SiC power devices and their emerging applications are reviewed and the design challenges and future trends are summarized.
Journal ArticleDOI
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
TL;DR: In this article, the characteristics and commercial status of both vertical and lateral GaN power devices are reviewed, providing the background necessary to understand the significance of these recent developments and the challenges encountered in GaN-based converter design, such as the consequences of faster switching on gate driver and board layout.
Book ChapterDOI
Lanthanides in Luminescent Thermometry
TL;DR: Luminescent ratiometric thermometers combining high spatial and temporal resolution at the micro-and nanoscale, where the conventional methods are ineffective, have emerged over the last decade as an effervescent field of research, essentially motivated by their potential applications in nanotechnology, photonics, and biomedicine as discussed by the authors.
Journal ArticleDOI
Design and Experimentation of WPT Charger for Electric City Car
TL;DR: This paper presents the design and implementation of a wireless power transfer (WPT) battery charger for an electric city car and describes in detail the design procedure of the power circuitry needed for its operation.
Journal ArticleDOI
High Switching Performance of 1700-V, 50-A SiC Power MOSFET Over Si IGBT/BiMOSFET for Advanced Power Conversion Applications
Samir Hazra,Ankan De,Lin Cheng,John W. Palmour,Marcelo Schupbach,Brett Hull,Scott Allen,Subhashish Bhattacharya +7 more
TL;DR: In this paper, the authors report switching performance of a new 1700-V, 50-A SiC MOSFET designed and developed by Cree, Inc. and compare it with other SiC devices.
References
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Journal ArticleDOI
Current Gain Degradation in 4H-SiC Power BJTs
Benedetto Buono,Reza Ghandi,Martin Domeij,B. Gunnar Malm,Carl-Mikael Zetterling,Mikael Östling +5 more
TL;DR: In this paper, the authors propose a solution to the long-term stability problem of SiC airs, which is very attractive for high power application, but long term stability is still problematic and it could prohibit commercial production of these devices.