Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
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Journal ArticleDOI
Characterization of the inhomogeneous barrier distribution in a Pt/(100)β-Ga2O3 Schottky diode via its temperature-dependent electrical properties
Guangzhong Jian,Guangzhong Jian,Qiming He,Wenxiang Mu,Bo Fu,Hang Dong,Hang Dong,Yuan Qin,Yuan Qin,Ying Zhang,Ying Zhang,Huiwen Xue,Shibing Long,Shibing Long,Zhitai Jia,Zhitai Jia,Hangbing Lv,Hangbing Lv,Qi Liu,Qi Liu,Xutang Tao,Ming Liu,Ming Liu +22 more
TL;DR: In this article, a Pt/β-Ga2O3 Schottky barrier diode with good performance characteristics, such as a low ON-resistance, high forward current, and a large rectification ratio, was fabricated.
Journal ArticleDOI
Design and Experimental Validation of a Wire-Bond-Less 10-kV SiC MOSFET Power Module
Christina DiMarino,Bassem Mouawad,C. Mark Johnson,Meiyu Wang,Yansong Tan,Guo-Quan Lu,Dushan Boroyevich,Rolando Burgos +7 more
TL;DR: In this article, a high-density, high-speed, 10-kV power module was proposed for wide bandgap (WBG) power devices with voltage ratings exceeding 10 kV.
Journal ArticleDOI
A Low Gate Turn-OFF Impedance Driver for Suppressing Crosstalk of SiC MOSFET Based on Different Discrete Packages
TL;DR: In this paper, two additional capacitors are added to suppress the crosstalk in a phase-leg configuration, which hinders the increase of switching frequency and lowers the reliability of the power electronic equipment.
Proceedings ArticleDOI
Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module
Jun Wang,Slavko Mocevic,Jiewen Hu,Yue Xu,Christina DiMarino,Igor Cvetkovic,Rolando Burgos,Dushan Boroyevich +7 more
TL;DR: A novel hybrid-current-mode switching-cycle control approach has been proposed and validated on a SiC-PEBB-based modular multilevel Buck converter (MMBC) based on 1.7 kV SiC MOSFET power modules.
Journal ArticleDOI
Applications and Impacts of Nanoscale Thermal Transport in Electronics Packaging
Ronald J. Warzoha,Adam A. Wilson,Brian F. Donovan,Nazli Donmezer,Ashutosh Giri,Patrick E. Hopkins,Sukwon Choi,Darshan G. Pahinkar,Jingjing Shi,Samuel Graham,Zhiting Tian,Laura B. Ruppalt +11 more
TL;DR: In this paper, the authors highlight the importance of nanoscale thermal transport mechanisms at each layer in material hierarchies that make up modern electronic devices, including those mechanisms that impact thermal transport through: substrates, interfaces and two-dimensional materials, and heat spreading materials.
References
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Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
Journal ArticleDOI
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
T. Oka,Tomohiro Nozawa +1 more
TL;DR: In this article, the GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows the high threshold voltage, whereas the low on-state resistance is maintained by the 2D electron gas remaining in the channel except for the recessed gate region.
Journal ArticleDOI
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
Proceedings ArticleDOI
40-W/mm Double Field-plated GaN HEMTs
TL;DR: In this paper, a double field-plated GaN HEMT with increased power density and robustness was presented, where a first field plate (FP1) was integrated with the gate for both reduced gate resistance and elimination of electron trapping.