Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
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Journal ArticleDOI
Switch Open-Fault Detection for a Three-Phase Hybrid Active Neutral-Point-Clamped Rectifier
TL;DR: The effectiveness and feasibility of the proposed fault-detection method for open-switch failures in hybrid active neutral-point-clamped (HANPC) rectifiers are verified through PSIM simulations and experimental results.
Proceedings ArticleDOI
GaN Power Switches: A Comprehensive Approach to Power Loss Estimation
TL;DR: In this article, the authors proposed a comprehensive method to predict conduction and switching losses in GaN devices by using thermal measurement, the inaccuracy of traditional electrical measurements for power losses (e.g., double-pulse test) is eliminated and a higher accuracy model is achieved.
Journal ArticleDOI
Influence of Aging Atmosphere on the Thermal Stability of Low-Temperature Rapidly Sintered Cu Nanoparticle Paste Joint
TL;DR: In this paper, isothermal aging tests of low-temperature rapidly sintered Cu-Cu joints were conducted at 180°C for 72h under air and vacuum atmospheres, respectively.
Dissertation
Onduleur à forte intégration utilisant des semi-conducteurs à grand gap
TL;DR: The Power Chip On Chip (POC) as mentioned in this paper is a semi-conducteur based on the concept of power chip on chip (PCO) which is used to reduce the perturbations electromagnetiques.
Journal ArticleDOI
Analysis and Design of a Resonant Power Converter With a Wide Input Voltage Range for AC/DC Applications
TL;DR: In this paper, the authors present a thorough analysis of the operation of a class DE converter in order to derive a set of conditions under which it can achieve a constant input impedance over a wide input-voltage range (60 −325 Vdc) with a constant output voltage (450 Vdc), while maintaining ZVS across the full range.
References
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Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
Journal ArticleDOI
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
T. Oka,Tomohiro Nozawa +1 more
TL;DR: In this article, the GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows the high threshold voltage, whereas the low on-state resistance is maintained by the 2D electron gas remaining in the channel except for the recessed gate region.
Journal ArticleDOI
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
Proceedings ArticleDOI
40-W/mm Double Field-plated GaN HEMTs
TL;DR: In this paper, a double field-plated GaN HEMT with increased power density and robustness was presented, where a first field plate (FP1) was integrated with the gate for both reduced gate resistance and elimination of electron trapping.