Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
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Journal ArticleDOI
Recent advances and trend of HEV/EV-oriented power semiconductors – an overview
TL;DR: In this paper, the development advances and trend of power semiconductors used in hybrid and electric vehicles (HEV/EV) are discussed along with a review of the automotive standard of the power semiconductor devices.
Journal ArticleDOI
Comparative Experimental Evaluation of Zero-Voltage-Switching Si Inverters and Hard-Switching Si and SiC Inverters
TL;DR: In this paper, the authors evaluate the performance of four prototypes in terms of efficiency and costs of soft-switching inverters and compare them with hard-switched inverters.
Journal ArticleDOI
Real-Time Acoustic Emission Monitoring of Wear-Out Failure in SiC Power Electronic Devices During Power Cycling Tests
TL;DR: In this article, acoustic emission (AE) was applied to monitor the wearout failure in discrete SiC Schottky barrier diodes devices with a Ag sinter die attach to successfully monitor the real-time progress of failure of Al ribbons for the first time.
Journal ArticleDOI
Calculation of Printed Circuit Board Power-Loop Stray Inductance in GaN or High di/dt Applications
TL;DR: In this paper, an analytical method is proposed, which uses the Biot-Savart law for an accurate analytical estimation of the magnetic field intensity in the selected geometry, leading to inductance calculation.
Journal ArticleDOI
Influences on Output Distortion in Voltage Source Inverter Caused by Power Devices’ Parasitic Capacitance
TL;DR: In this paper, an equivalent circuit of a voltage source inverter containing parasitic capacitance is constructed, and a mathematical expression of phase voltage distortion is derived from Kirchhoff's voltage law, Kirchoff's current law, and charge and discharge characteristics of capacitance.
References
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Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
Journal ArticleDOI
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
T. Oka,Tomohiro Nozawa +1 more
TL;DR: In this article, the GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows the high threshold voltage, whereas the low on-state resistance is maintained by the 2D electron gas remaining in the channel except for the recessed gate region.
Journal ArticleDOI
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
Proceedings ArticleDOI
40-W/mm Double Field-plated GaN HEMTs
TL;DR: In this paper, a double field-plated GaN HEMT with increased power density and robustness was presented, where a first field plate (FP1) was integrated with the gate for both reduced gate resistance and elimination of electron trapping.