Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
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Proceedings ArticleDOI
Control of SiC based front-end rectifier under unbalanced supply voltage
Ramkrishan Maheshwari,Ionut Trintis,Ghanshyamsinh Gohil,Sanjay K. Chaudhary,Stig Munk-Nielsen +4 more
TL;DR: In this article, a SiC MOSFET-based front-end converter is considered, and a new feed-forward controller for the negative-sequence current is presented.
The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
M. Millesimo,Matteo Borga,Benoit Bakeroot,N. Posthuma,Stefaan Decoutere,Enrico Sangiorgi,Claudio Fiegna,A. Tallarico +7 more
TL;DR: In this article , the role of switching frequency and duty cycle on the time-dependent gate breakdown of high electron mobility transistors with Schottky metal to p-GaN gate was analyzed.
Proceedings ArticleDOI
Experimental Evaluation on Noise Characteristics in SiC-Based Synchronous Boost Converter
Takaaki Ibuchi,Tsuyoshi Funaki +1 more
TL;DR: In this paper, the authors investigated the dynamic characteristics of SiC MOSFETs in a synchronous boost converter, and evaluated their characters as EMI noise source based on conducted noise measurement.
Journal ArticleDOI
Multiphysics Performance Evaluation of Flexible Substrate Based 1.2kV SiC Half Bridge Intelligent Power Module with Stacked Dies
TL;DR: In this paper, a flexible substrate based 1.2kV SiC Half Bridge Intelligent Power Module with stacked dies is introduced, the module design is based on the concept of Power Supply in Package (PSiP) and high functionality is integrated in the module.
Proceedings ArticleDOI
Seamless Transition Mode Control for SiC Energy-recycling DC Electronic Loads *
Jiahua Xu,Zhiliang Zhang,Mingxie He,Jing Zhu,Xiang Li,Qi Yang,Wei Xiaozhong,Xiaoyong Ren,Qianhong Chen +8 more
TL;DR: In this article, a 3-kW three-stage energy-recycling DC electronic load with a wide input voltage range of 150 V-750 V is proposed, which is composed of a SiC-based interleaved boost DC-DC converter with an input current loop and an input voltage loop, and a single-phase grid-connected T-type inverter with double loop control including the outer voltage loop and the inner current loop.
References
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Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
Journal ArticleDOI
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
T. Oka,Tomohiro Nozawa +1 more
TL;DR: In this article, the GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows the high threshold voltage, whereas the low on-state resistance is maintained by the 2D electron gas remaining in the channel except for the recessed gate region.
Journal ArticleDOI
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
Proceedings ArticleDOI
40-W/mm Double Field-plated GaN HEMTs
TL;DR: In this paper, a double field-plated GaN HEMT with increased power density and robustness was presented, where a first field plate (FP1) was integrated with the gate for both reduced gate resistance and elimination of electron trapping.