Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
More filters
Proceedings ArticleDOI
Design Consideration of a High-Speed Integrated Permanent Magnet Machine and its Drive System
TL;DR: Four major technical issues related to this integrated drive are introduced in this paper, including integrating magnetics of the grid connected filters in the machine with minimized coupling effects, investigating a novel winding connection method to manage extra terminals induced by filters and thermal management considering both electrical machine and power electronics.
Journal ArticleDOI
Review of wide band-gap technology: power device, gate driver, and converter design
Krishna Ravinchandra,Tan Kheng Suan Freddy,June-Seok Lee,Kyo-Beum Lee,Homer Alan Mantooth,Vinesh Thiruchelvam,Jerome Ignatius Yuen Yi Xian +6 more
Proceedings ArticleDOI
Performance evaluation of a DC-DC boost converter with wide bandgap power devices
TL;DR: In this paper, a non-isolated dc-dc boost converter based on SiC power devices optimized for use in photovoltaic (PV) energy conversion systems is presented.
Proceedings ArticleDOI
Experimental evaluation of SiC MOSFET and GaN HEMT losses in inverter operation
TL;DR: This paper measures the average dissipated power in inverter operation for different input voltages and different output currents of two promising devices, SiC MOSFET and GaN HEMT, chosen from two leading manufacturers.
Journal ArticleDOI
Time-dependent dielectric breakdown of gate oxide on 4H-SiC with different oxidation processes
TL;DR: In this article, the effects of oxidation and nitric oxide (NO) post-oxidation annealing (POA) processes on the gate oxide integrity on 4H-SiC are investigated.
References
More filters
Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
Journal ArticleDOI
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
T. Oka,Tomohiro Nozawa +1 more
TL;DR: In this article, the GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows the high threshold voltage, whereas the low on-state resistance is maintained by the 2D electron gas remaining in the channel except for the recessed gate region.
Journal ArticleDOI
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
Proceedings ArticleDOI
40-W/mm Double Field-plated GaN HEMTs
TL;DR: In this paper, a double field-plated GaN HEMT with increased power density and robustness was presented, where a first field plate (FP1) was integrated with the gate for both reduced gate resistance and elimination of electron trapping.