Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
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An Active Gate Driver of SiC MOSFET Module Based on PCB Rogowski Coil for Optimizing Tradeoff Between Overshoot and Switching Loss
TL;DR: In this article , a closed-loop active gate driver (AGD) based on the printed-circuit-board (PCB) Rogowski coil is proposed for optimizing the switching performance of SiC mosfets.
Journal ArticleDOI
Heat Transfer Characteristics of Conventional Fluids and Nanofluids in Micro-Channels with Vortex Generators: A Review
TL;DR: In this paper , a comprehensive review on the research progress on the heat transfer and fluid flow characteristics of nanofluids for both single and two-phase models in different types of micro-channels.
Proceedings ArticleDOI
Off-Grid Commercial LED Driver Optimization using GaN Transistors
Renan R. Duarte,Guilherme Gindri Pereira,Marco A. Dalla Costal,Carlos Henrique Barriquello,J. Marcos Alonso +4 more
TL;DR: The results prove that despite being more expensive than Si MOSFETs in a direct comparison, GaN transistors allow for a lower overall cost.
Proceedings ArticleDOI
Design and analysis of GaN FET-based resonant dc-dc converter
TL;DR: In this paper, the authors presented a design consideration of GaN FET-based resonant dc-dc converter, and the efficiency and ZVS characteristics of the resonant DC-DC converter based on GaN-FET parameters are theoretically analyzed.
Proceedings ArticleDOI
A Quasi-Three-Level Modulation Scheme to Combat Motor Overvoltage in SiC-Based Drives with Open-End Stator Winding Configurations
Mohamed S. Diab,Xibo Yuan +1 more
TL;DR: This paper proposes a quasi-three-level PWM scheme to combat the motor overvoltage oscillations in cable-fed drives with open-winding configurations and reshapes the PWM voltage pulses at the inverter side to counterbalance the voltage reflections across the cable, resulting in alleviated motor over voltage within tolerable insulation design level.
References
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Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
Journal ArticleDOI
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
T. Oka,Tomohiro Nozawa +1 more
TL;DR: In this article, the GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows the high threshold voltage, whereas the low on-state resistance is maintained by the 2D electron gas remaining in the channel except for the recessed gate region.
Journal ArticleDOI
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
Proceedings ArticleDOI
40-W/mm Double Field-plated GaN HEMTs
TL;DR: In this paper, a double field-plated GaN HEMT with increased power density and robustness was presented, where a first field plate (FP1) was integrated with the gate for both reduced gate resistance and elimination of electron trapping.