Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
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Journal ArticleDOI
Comparative Temperature Dependent Evaluation and Analysis of 1.2-kV SiC Power Diodes for Extreme Temperature Applications
TL;DR: In this article, the temperature dependence of silicon carbide (SiC) power diodes is systematically characterized and analyzed over a wide temperature range of 90 −478 K, especially focusing on cryogenic temperature.
Proceedings ArticleDOI
A High Power Density Inverter Design Based on GaN Power Devices
Wuji Meng,Fanghua Zhang,Zirui Fu +2 more
TL;DR: In this article, a full-bridge inverter design based on GaN power devices is presented and the carrier phase-shifted SPWM scheme is adopted to double the equivalent frequency of magnetic components.
Journal ArticleDOI
Performance Improvement Strategies for Discrete Wide Bandgap Devices: A Systematic Review
TL;DR: In this paper, a comprehensive and in-depth overview of the discrete package is presented, which encompasses switching oscillations and limited current capacity issues of discrete devices, and state-of-the-art methods to mitigate the switching oscillation and the current imbalance are summarized and evaluated.
Proceedings ArticleDOI
On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures
TL;DR: In this article, an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and traditional Si Super Junction (S-J) power devices at elevated temperatures is provided.
Proceedings ArticleDOI
EMI Modeling of Three-Level Active Neutral-Point-Clamped SiC Inverter Under Different Modulation Schemes
TL;DR: In this article, the authors investigated the electromagnetic interference (EMI) emission in three-level active neutral-point-clamped (3L-ANPC) silicon carbide (SiC) inverter.
References
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Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
Journal ArticleDOI
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
T. Oka,Tomohiro Nozawa +1 more
TL;DR: In this article, the GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows the high threshold voltage, whereas the low on-state resistance is maintained by the 2D electron gas remaining in the channel except for the recessed gate region.
Journal ArticleDOI
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
Proceedings ArticleDOI
40-W/mm Double Field-plated GaN HEMTs
TL;DR: In this paper, a double field-plated GaN HEMT with increased power density and robustness was presented, where a first field plate (FP1) was integrated with the gate for both reduced gate resistance and elimination of electron trapping.