Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
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Proceedings ArticleDOI
Dynamic voltage balancing method for fast-switching SiC MOSFETs with high dv/dt rates
TL;DR: In this paper, a voltage balancing method for dynamic voltage sharing among stacked SiC MOSFETs with high dv/dt rates has been proposed to balance voltage across stacked switches with minimum losses added.
Journal ArticleDOI
Tri-Gated Hybrid Anode AlGaN/GaN Power Diode With Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current
TL;DR: In this paper, a tri-gated hybrid anode AlGaN/GaN power diode with intrinsic low turn-on voltage was proposed, which can be used for fabricating high performance large periphery devices for power applications.
Proceedings ArticleDOI
Thermal and Thermomechanical Modeling to Design a Gallium Oxide Power Electronics Package
Paul Paret,Gilberto Moreno,Bidzina Kekelia,Ramchandra M. Kotecha,Xuhui Feng,Kevin Bennion,Barry Mather,Andriy Zakutayev,Sreekant Narumanchi,Samuel Graham,Samuel Kim +10 more
TL;DR: In this paper, the research methodology in designing an electronics package for gallium oxide devices is outlined, and different package designs that include various material combinations and cooling configurations are explored, and their thermal and thermomechanical performance are reported.
Journal ArticleDOI
High-efficiency PV inverter with SiC technology
TL;DR: In this article, a three-phase, two-level (2L) voltage source inverter and an active commonmode (CM) filter are proposed for direct connection to the low voltage (LV) grid.
Journal ArticleDOI
Discontinuous PWM for Online Condition Monitoring of SiC Power Modules
Fernando Gonzalez-Hernando,Jon San-Sebastian,Manuel Arias,Alejandro Rujas,Francesco Iannuzzo +4 more
TL;DR: In this paper, the authors present the utilization of DPWM for the online condition monitoring of SiC power MOSFET switching at high switching frequencies in a three-phase inverter prototype.
References
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Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
Journal ArticleDOI
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
T. Oka,Tomohiro Nozawa +1 more
TL;DR: In this article, the GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows the high threshold voltage, whereas the low on-state resistance is maintained by the 2D electron gas remaining in the channel except for the recessed gate region.
Journal ArticleDOI
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
Proceedings ArticleDOI
40-W/mm Double Field-plated GaN HEMTs
TL;DR: In this paper, a double field-plated GaN HEMT with increased power density and robustness was presented, where a first field plate (FP1) was integrated with the gate for both reduced gate resistance and elimination of electron trapping.