Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
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Proceedings ArticleDOI
Adoption of wide bandgap technology in hybrid/electric vehicles-opportunities and challenges
TL;DR: In this article, a comprehensive review of wide bandgap power switching devices and their adoption in hybrid/electric vehicles is presented, most notably in the electric propulsion and battery charging systems.
Journal ArticleDOI
A High-Performance Embedded SiC Power Module Based on a DBC-Stacked Hybrid Packaging Structure
TL;DR: In this article, the authors proposed an integrated half-bridge (HB) power module based on a direct bonding copper (DBC)-stacked hybrid packaging structure, which utilizes two DBC substrates to stack together, which form a 3-D power commutation loop.
Journal ArticleDOI
Enhanced photoconductivity in CdS/betanin composite nanostructures
TL;DR: In this paper, the authors synthesized CdS/Betanin core/shell structures using wet chemical routes, and showed that the composite structure is core-shell like, with cdS as the core and betanin (a natural dye), as the outer shell with an average core particle size of 10 nm.
Journal ArticleDOI
Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT
Ronghui Hao,Ning Xu,Guohao Yu,Liang Song,Fu Chen,Jie Zhao,Xuguang Deng,Xiang Li,Kai Cheng,Kai Fu,Yong Cai,Xinping Zhang,Baoshun Zhang +12 more
TL;DR: In this article, the effect of hydrogen plasma treatment radio frequency (RF) power, treatment time, and rapid thermal annealing (RTA) on the performance of high-resistivity-cap-layer high-electron-mobility-transistor (HRCL-HEMT) was systematically investigated.
Proceedings ArticleDOI
High-voltage double-pulsed measurement system for GaN-based power HEMTs
Davide Bisi,Antonio Stocco,Matteo Meneghini,Fabiana Rampazzo,Andrea Cester,Gaudenzio Meneghesso,Enrico Zanoni +6 more
TL;DR: In this article, a fully customable high-voltage pulsed system capable of double-pulsed I-V and time-resolved drain-current transient characterization from 1μs-to 100s-range is presented.
References
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Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
Journal ArticleDOI
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
T. Oka,Tomohiro Nozawa +1 more
TL;DR: In this article, the GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows the high threshold voltage, whereas the low on-state resistance is maintained by the 2D electron gas remaining in the channel except for the recessed gate region.
Journal ArticleDOI
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
Proceedings ArticleDOI
40-W/mm Double Field-plated GaN HEMTs
TL;DR: In this paper, a double field-plated GaN HEMT with increased power density and robustness was presented, where a first field plate (FP1) was integrated with the gate for both reduced gate resistance and elimination of electron trapping.