Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
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Journal ArticleDOI
Device-Level Multidimensional Thermal Dynamics With Implications for Current and Future Wide Bandgap Electronics
James Spencer Lundh,Yiwen Song,Bikramjit Chatterjee,Albert G. Baca,Robert Kaplar,Andrew M. Armstrong,Andrew A. Allerman,Brianna Klein,Dustin Kendig,Hyungtak Kim,Sukwon Choi +10 more
TL;DR: In this paper, the transient thermal dynamics of an AlGaN/GaN high electron mobility transistor (HEMT) were studied using thermoreflectance thermal imaging and Raman thermometry.
Review and Characterization of Gallium Nitride Power Devices
TL;DR: In this article, the authors present the characteristics and commercial status of both vertical and lateral GaN power devices from the user perspective, providing the background necessary to understand the significance of these recent developments.
Journal ArticleDOI
High-Voltage Vertical GaN p-n Diodes by Epitaxial Liftoff From Bulk GaN Substrates
Jingshan Wang,Robert McCarthy,Chris Youtsey,Rekha Reddy,Jinqiao Xie,Edward Beam,Louis J. Guido,Lina Cao,Patrick Fay +8 more
TL;DR: In this article, high performance vertical GaN-based p-n junction diodes fabricated using bandgap selective photoelectrochemical etching-based epitaxial liftoff (ELO) from bulk GaN substrates are demonstrated.
Journal ArticleDOI
Efficiency Improvement of Grid Inverters With Hybrid Devices
TL;DR: In this article, a hybrid switch with the combination of large-current silicon (Si) insulated gate bipolar transistor (IGBT) and small-current Si carbide (SiC) metal-oxide semiconductor field effect transistor (mosfet) is utilized in a three-phase T-type three-level grid inverter.
Journal ArticleDOI
The More-Electric Aircraft and Beyond
TL;DR: In this paper , the authors provide an overview of recent advancements in aircraft electrification, and trends and future developments referenced to the global aviation roadmap, as well as present a scenario in which electric power must be efficiently generated, distributed, and consumed to satisfy extremely high requirements of aviation safety.
References
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Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
Journal ArticleDOI
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
T. Oka,Tomohiro Nozawa +1 more
TL;DR: In this article, the GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows the high threshold voltage, whereas the low on-state resistance is maintained by the 2D electron gas remaining in the channel except for the recessed gate region.
Journal ArticleDOI
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
Proceedings ArticleDOI
40-W/mm Double Field-plated GaN HEMTs
TL;DR: In this paper, a double field-plated GaN HEMT with increased power density and robustness was presented, where a first field plate (FP1) was integrated with the gate for both reduced gate resistance and elimination of electron trapping.