Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
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Journal ArticleDOI
A review of gallium nitride power device and its applications in motor drive
TL;DR: In this article, the authors summarized the characteristics and development of the state-of-the-art GaN power devices with different structures, analyzes the research status, and forecasts the application prospect of GaN devices.
Journal ArticleDOI
A Case Study on Common Mode Electromagnetic Interference Characteristics of GaN HEMT and Si MOSFET Power Converters for EV/HEVs
TL;DR: In this article, the authors presented an experimental case study on the switching characteristics and common mode (CM) noise generation of a GaN-based half-bridge configuration operating in the synchronous boost mode.
Journal ArticleDOI
Comparative Study on Multiple Degrees of Freedom of Gate Drivers for Transient Behavior Regulation of SiC MOSFET
Zheng Zeng,Xiaoling Li +1 more
TL;DR: In this article, the turn-on and off behavior of an SiC mosfet regulated by a gate driver is modeled in detail, and insight mechanisms for suppressing the ringing and overshoot by using gate driver are highlighted.
Journal ArticleDOI
One-step exfoliation of ultra-smooth β-Ga2O3 wafers from bulk crystal for photodetectors
Wenxiang Mu,Zhitai Jia,Zhitai Jia,Yanru Yin,Qiangqiang Hu,Jian Zhang,Qian Feng,Yue Hao,Xutang Tao +8 more
TL;DR: In this paper, an economical and efficient one-step mechanical exfoliation method has been proposed to get epi-ready β-Ga2O3 wafers directly.
Journal ArticleDOI
Toward more electric powertrains in aircraft: Technical challenges and advancements
TL;DR: The main purpose of this article is to provide an instructive review of the technological challenges hindering the road toward more electric powertrains in aircraft and to further increase the fuel efficiency and power density of the aircraft.
References
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Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
Journal ArticleDOI
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
T. Oka,Tomohiro Nozawa +1 more
TL;DR: In this article, the GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows the high threshold voltage, whereas the low on-state resistance is maintained by the 2D electron gas remaining in the channel except for the recessed gate region.
Journal ArticleDOI
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
Proceedings ArticleDOI
40-W/mm Double Field-plated GaN HEMTs
TL;DR: In this paper, a double field-plated GaN HEMT with increased power density and robustness was presented, where a first field plate (FP1) was integrated with the gate for both reduced gate resistance and elimination of electron trapping.