Journal ArticleDOI
A Survey of Wide Bandgap Power Semiconductor Devices
TLDR
In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.Abstract:
Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.read more
Citations
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Proceedings ArticleDOI
How Good are the Design Tools in Power Electronics
Thomas Lagier,Piotr Dworakowski,Laurent Chedot,Francois Wallart,Bruno Lefebvre,Jose Maneiro,J. D. Paez,Philippe Ladoux,Cyril Buttay +8 more
TL;DR: A 100 kW, isolated dc–dc converter was built over the course of one year, starting from a blank page, and reflects on the strengths and weaknesses of computer-based modelling and simulation tools.
Journal ArticleDOI
Event-Focused Digital Control to Keep High Efficiency in a Wide Power Range in a SiC-Based Synchronous DC/DC Boost Converter
TL;DR: In this article, a control approach based on the detection of events and changing between two different conduction modes is proposed to reach high efficiency over the entire power range, especially at medium and low power levels.
Proceedings ArticleDOI
Hysteresis modelling of a medium frequency single-phase transformer
TL;DR: In this article, a feedback preisach hysteresis model equivalent circuit implementation of a medium frequency single-phase transformer being a part of a high power and high efficiency DC-DC converter is presented.
Proceedings ArticleDOI
System Design of Dual Active Bridge (DAB) Converter Based on GaN HEMT Device
TL;DR: A DAB converter design based on GaN HEMT Device is presented, and the optimal design of high frequency transformer is introduced and a useful reference for the practical application of DAB circuit design is provided.
Book ChapterDOI
Thermomechanical Modeling of High-Temperature Bonded Interface Materials
TL;DR: In this paper, two modeling strategies are discussed in the context of high-temperature bonded materials, and a short review of sintered silver is provided, as it is widely seen as a potentially promising and reliable bonded material for high temperature applications.
References
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Journal ArticleDOI
Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications
TL;DR: In this article, a recessed-gate structure was proposed to realize normally off operation of high-voltage AlGaN/GaN high-electron mobility transistors (HEMTs) for power electronics applications.
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.
Journal ArticleDOI
AlGaN/GaN Recessed MIS-Gate HFET With High-Threshold-Voltage Normally-Off Operation for Power Electronics Applications
T. Oka,Tomohiro Nozawa +1 more
TL;DR: In this article, the GaN-based recessed MIS-gate structure in conjunction with negative polarization charges under the gate allows the high threshold voltage, whereas the low on-state resistance is maintained by the 2D electron gas remaining in the channel except for the recessed gate region.
Journal ArticleDOI
Microwave performance of a 0.25 μm gate AlGaN/GaN heterostructure field effect transistor
TL;DR: In this paper, a 0.25 μm gate length AlGaN/GaN heterostructure field effect transistor (HFET) with a maximum extrinsic transconductance of 27 mS/mm (at room temperature) limited by the source series resistance was fabricated.
Proceedings ArticleDOI
40-W/mm Double Field-plated GaN HEMTs
TL;DR: In this paper, a double field-plated GaN HEMT with increased power density and robustness was presented, where a first field plate (FP1) was integrated with the gate for both reduced gate resistance and elimination of electron trapping.