Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
Citations
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Proceedings ArticleDOI
Advances in optically pumped semiconductor lasers for blue emission under frequency doubling
Yanbo Bai,Jeffrey Wisdom,John P. Charles,Patrick Hyland,Christian Scholz,Zuntu Xu,Yong Lin,Eli Weiss,Juan Chilla,Arnaud Lepert +9 more
TL;DR: In this article, the authors present their recent progress of high-power, 920nm OPSLs frequency doubled to 460nm for light-show applications through electrical, optical, thermal, and mechanical modeling.
Book ChapterDOI
High external quantum efficiency III-nitride micro-light-emitting diodes
TL;DR: In this paper, atomic layer deposition (ALD) for sidewall passivation, chemical treatment, and tunnel junctions, all play an important role in achieving efficient μLEDs, and the effects of sidewall damage and surface recombination are greatly suppressed or eliminated, thus size-independent EQE characteristic are demonstrated.
Journal ArticleDOI
Experimental Investigations of Phase Equilibria in Ternary Ag-Cu-Ga System
TL;DR: In this article, an experimental study of phase equilibria in the ternary Ag-Cu-Ga system was carried out by using DTA/DSC, isothermal equilibration and microscopic as well as x-ray analyses.
Journal ArticleDOI
Electrically injected GaN-on-Si blue microdisk laser diodes.
Yongjun Tang,Meixin Feng,Hanru Zhao,Jin Wang,Jianxun Liu,Xiujian Sun,Qian Sun,Shuming Zhang,Hui Yang +8 more
TL;DR: In this article , the waveguide layers and cladding layers were carefully engineered to enhance the optical confinement and reduce internal absorption loss, and the first electrically injected blue microdisk laser diodes were successfully fabricated, and exhibited a resistor-capacitance-limited bandwidth of 24.1 GHz, showing highly promising applications in high-speed and large modulation-bandwidth visible light communication.
Journal ArticleDOI
A Method to Obtain Auger Recombination Coefficient in an InGaN-Based Blue Light-Emitting Diode*
Lai Wang,Xiao Meng,Jung-Hoon Song,Tae-Soo Kim,Seung-Young Lim,Zhibiao Hao,Yi Luo,Changzheng Sun,Yanjun Han,Bing Xiong,Jing Wang,Hongtao Li +11 more
TL;DR: In this article, the authors derived the Auger recombination coefficient by fitting efficiency and carrier lifetime curves simultaneously, which can minimize the uncertainty of fitting results, and obtained the obtained Auger coefficient is cm6s−1 in the present sample, which contributes slightly to efficiency droop effect.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
Journal ArticleDOI
Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
Journal ArticleDOI
High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
Journal ArticleDOI
Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.