Journal ArticleDOI
Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays
Steven P. DenBaars,Daniel F. Feezell,Katheryn Kelchner,Siddha Pimputkar,Chi Chen Pan,Chia Chen Yen,Shinichi Tanaka,Yuji Zhao,Nathan Pfaff,Robert M. Farrell,Michael Iza,Stacia Keller,Umesh K. Mishra,James S. Speck,Shuji Nakamura +14 more
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TLDR
In this article, a review of the unique polarization anisotropy in gallium nitride (GaN) is included for the different crystal orientations, highlighting high power violet and blue emitters, and the effects of indium incorporation and well width.About:
This article is published in Acta Materialia.The article was published on 2013-02-01. It has received 346 citations till now. The article focuses on the topics: Light extraction in LEDs & Solid-state lighting.read more
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Near-UV electroluminescence in unipolar-doped, bipolar-tunneling GaN/AlN heterostructures
Tyler A. Growden,Weidong Zhang,Elliott R. Brown,David F. Storm,David J. Meyer,Paul R. Berger +5 more
TL;DR: Cross-gap light emission is reported in n-type unipolar GaN/AlN double-barrier heterostructure diodes at room temperature in contrast to traditional GaN light emitters, p-type doping and p-contacts are completely avoided.
Journal ArticleDOI
Multicolor and white light emitting Tb3+/Sm3+ co-doped zinc phosphate barium titanate glasses via energy transfer for optoelectronic device applications
TL;DR: A series of Tb3+/Sm3+ co-doped ZPBT glasses have been successfully prepared via melt quenching technique and their photoluminescence properties and energy transfer mechanism were investigated as mentioned in this paper.
Journal ArticleDOI
Ammonothermal Synthesis of Nitrides: Recent Developments and Future Perspectives
Jonas Häusler,Wolfgang Schnick +1 more
TL;DR: Challenges and future perspectives regarding the synthesis and crystal growth of novel nitrides, as well as the advancement of autoclave techniques are discussed.
Journal ArticleDOI
The role of polarization fields in Auger-induced efficiency droop in nitride-based light-emitting diodes
TL;DR: In this paper, the rates of nonradiative Auger recombination and radiative recombination in polar GaN/AlN quantum wells (QWs) are calculated and it is shown that in these QWs the polarization field not only suppresses the RR but also enhances the rate of AR.
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GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy
Stephen W. Kaun,Elaheh Ahmadi,Baishakhi Mazumder,Feng Wu,Erin C. H. Kyle,Peter Burke,Umesh K. Mishra,James S. Speck +7 more
TL;DR: In this article, the compositional homogeneity of metal-polar In0.17Al0.83N/GaN/AlN/GAN structures was confirmed by plan-view high-angle annular dark-field scanning transmission electron microscopy and atom probe tomography.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
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Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
Patrick Waltereit,Oliver Brandt,Achim Trampert,Holger T. Grahn,J. Menniger,Manfred Ramsteiner,M. Reiche,Klaus H. Ploog +7 more
TL;DR: It is demonstrated that the epitaxial growth of GaN/(Al,Ga)N on tetragonal LiAlO2 in a non-polar direction allows the fabrication of structures free of electrostatic fields, resulting in an improved quantum efficiency, which is expected to pave the way towards highly efficient white LEDs.
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Auger recombination in InGaN measured by photoluminescence
TL;DR: In this paper, the Auger recombination coefficient in quasi-bulk InxGa1−xN (x∼9%−15%) layers grown on GaN (0001) is measured by a photoluminescence technique.
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High dislocation densities in high efficiency GaN‐based light‐emitting diodes
TL;DR: In this article, the electrical, optical, and structural properties of light emitting diodes (LEDs) fabricated from the III-V nitride material system have been studied.
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Solid phase immiscibility in GaInN
I.H. Ho,Gerald B. Stringfellow +1 more
TL;DR: In this article, the temperature dependence of the binodal and spinodal lines in the Ga1−xInxN system was calculated using a modified valence force field model where the lattice is allowed to relax beyond the first nearest neighbor.